A silicon carbide self-aligned and ion implanted static induction transistor (SAI-SIT) for 150 watt S-Band operation

The Static Induction Transistor (SIT) has proven itself as an appropriate device to take full advantage of the high breakdown field strength, thermal conductivity, and electron velocity characteristics of silicon carbide. Microwave SITs using metal Schottky gates have been fabricated by several grou...

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Bibliographische Detailangaben

Hauptverfasser:	Knight, T.J., Clarke, R.C., Barron, R.R., Ostop, J.A., Morick, B.A., Gigante, J.R., Malkowski, W.J., Morse, A.W., DeSalvo, G.C., Petrosky, K.J., Curtice, W.R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Contracts Fingers Microwave transistors Nickel Power transistors Scanning electron microscopy Silicides Silicon carbide Thermal conductivity Voltage
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