Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET
In this article, an analytical model for the total-ionizing-dose (TID) radiation-induced electric field redistribution (RIER) in the drift region is established based on the Poisson equation, which explains the "slow-fast-slow" degradation trend of breakdown voltage (BV) of the shield gate...
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| Veröffentlicht in: | IEEE transactions on electron devices 2023-11, Vol.70 (11), p.5543-5549 |
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| container_title | IEEE transactions on electron devices |
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| creator | Ren, Min Zhang, Shuping Tu, Junjie Tao, Lin Zhou, Ziyi Wu, Yining Li, Zehong Zhang, Bo |
| description | In this article, an analytical model for the total-ionizing-dose (TID) radiation-induced electric field redistribution (RIER) in the drift region is established based on the Poisson equation, which explains the "slow-fast-slow" degradation trend of breakdown voltage (BV) of the shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET) with the increase of the radiation dose in the experiments. Moreover, a new radiation-hardened SGT MOSFET based on the internal electric field modulation (IEM-SGT) concept is proposed. The simulation shows that IEM-SGT can achieve five times better radiation resistance of BV than that of the non-hardened device, with a small deterioration in electrical performance. |
| doi_str_mv | 10.1109/TED.2023.3319281 |
| format | Article |
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Moreover, a new radiation-hardened SGT MOSFET based on the internal electric field modulation (IEM-SGT) concept is proposed. The simulation shows that IEM-SGT can achieve five times better radiation resistance of BV than that of the non-hardened device, with a small deterioration in electrical performance.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3319281</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Breakdown voltage (BV) ; Degradation ; Electric fields ; Electron traps ; Field effect transistors ; internal electric field modulation (IEM) ; Logic gates ; Mathematical models ; Metal oxide semiconductors ; MOSFET ; MOSFETs ; Poisson equation ; Radiation dosage ; Radiation effects ; Radiation hardening ; radiation resistance ; Radiation tolerance ; radiation-induced electric field redistribution (RIER) ; Semiconductor device modeling ; Semiconductor devices ; shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET) ; total-ionizing-dose (TID)</subject><ispartof>IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5543-5549</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-8d1659cdd3efa2709291fafe351879091620bd422247bc74ecf5da673a86716f3</cites><orcidid>0009-0006-5540-0388 ; 0000-0002-6762-2838 ; 0000-0003-1288-1549 ; 0009-0009-9580-6202</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10273853$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10273853$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ren, Min</creatorcontrib><creatorcontrib>Zhang, Shuping</creatorcontrib><creatorcontrib>Tu, Junjie</creatorcontrib><creatorcontrib>Tao, Lin</creatorcontrib><creatorcontrib>Zhou, Ziyi</creatorcontrib><creatorcontrib>Wu, Yining</creatorcontrib><creatorcontrib>Li, Zehong</creatorcontrib><creatorcontrib>Zhang, Bo</creatorcontrib><title>Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this article, an analytical model for the total-ionizing-dose (TID) radiation-induced electric field redistribution (RIER) in the drift region is established based on the Poisson equation, which explains the "slow-fast-slow" degradation trend of breakdown voltage (BV) of the shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET) with the increase of the radiation dose in the experiments. Moreover, a new radiation-hardened SGT MOSFET based on the internal electric field modulation (IEM-SGT) concept is proposed. The simulation shows that IEM-SGT can achieve five times better radiation resistance of BV than that of the non-hardened device, with a small deterioration in electrical performance.</description><subject>Breakdown voltage (BV)</subject><subject>Degradation</subject><subject>Electric fields</subject><subject>Electron traps</subject><subject>Field effect transistors</subject><subject>internal electric field modulation (IEM)</subject><subject>Logic gates</subject><subject>Mathematical models</subject><subject>Metal oxide semiconductors</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Poisson equation</subject><subject>Radiation dosage</subject><subject>Radiation effects</subject><subject>Radiation hardening</subject><subject>radiation resistance</subject><subject>Radiation tolerance</subject><subject>radiation-induced electric field redistribution (RIER)</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor devices</subject><subject>shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET)</subject><subject>total-ionizing-dose (TID)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7xRxLbI-q31KpSG2bLjS_gKo2Lkwzw63HVDkyn9_S8d9KD0DMlI0qJeiumkxEjjI84p4pJeoMGNMtEovI0v0UDQqhMFJf8Hj207SHGPE3ZAB0L35k6WfrG_brmM5n4FvDWWGc655tk2di-BIunNZRdcCWeOagt3oJ1bcz7_kzhtbdQY9NYvDDBQhMP4TV0X97iyge8mxd4vdnNpsUjuqtM3cLTdQ7RR9yOF8lqM1-O31dJydKsS6SleaZKazlUhgmimKKVqYBnVApFFM0Z2duUMZaKfSlSKKvMmlxwI3NB84oP0evl7in47x7aTh98H5r4UjMpaaqUzFikyIUqg2_bAJU-BXc04UdTos9SdZSqz1L1VWqsvFwqDgD-4UxwmXH-B_T6cf8</recordid><startdate>20231101</startdate><enddate>20231101</enddate><creator>Ren, Min</creator><creator>Zhang, Shuping</creator><creator>Tu, Junjie</creator><creator>Tao, Lin</creator><creator>Zhou, Ziyi</creator><creator>Wu, Yining</creator><creator>Li, Zehong</creator><creator>Zhang, Bo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0006-5540-0388</orcidid><orcidid>https://orcid.org/0000-0002-6762-2838</orcidid><orcidid>https://orcid.org/0000-0003-1288-1549</orcidid><orcidid>https://orcid.org/0009-0009-9580-6202</orcidid></search><sort><creationdate>20231101</creationdate><title>Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET</title><author>Ren, Min ; Zhang, Shuping ; Tu, Junjie ; Tao, Lin ; Zhou, Ziyi ; Wu, Yining ; Li, Zehong ; Zhang, Bo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-8d1659cdd3efa2709291fafe351879091620bd422247bc74ecf5da673a86716f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Breakdown voltage (BV)</topic><topic>Degradation</topic><topic>Electric fields</topic><topic>Electron traps</topic><topic>Field effect transistors</topic><topic>internal electric field modulation (IEM)</topic><topic>Logic gates</topic><topic>Mathematical models</topic><topic>Metal oxide semiconductors</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Poisson equation</topic><topic>Radiation dosage</topic><topic>Radiation effects</topic><topic>Radiation hardening</topic><topic>radiation resistance</topic><topic>Radiation tolerance</topic><topic>radiation-induced electric field redistribution (RIER)</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor devices</topic><topic>shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET)</topic><topic>total-ionizing-dose (TID)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ren, Min</creatorcontrib><creatorcontrib>Zhang, Shuping</creatorcontrib><creatorcontrib>Tu, Junjie</creatorcontrib><creatorcontrib>Tao, Lin</creatorcontrib><creatorcontrib>Zhou, Ziyi</creatorcontrib><creatorcontrib>Wu, Yining</creatorcontrib><creatorcontrib>Li, Zehong</creatorcontrib><creatorcontrib>Zhang, Bo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ren, Min</au><au>Zhang, Shuping</au><au>Tu, Junjie</au><au>Tao, Lin</au><au>Zhou, Ziyi</au><au>Wu, Yining</au><au>Li, Zehong</au><au>Zhang, Bo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2023-11-01</date><risdate>2023</risdate><volume>70</volume><issue>11</issue><spage>5543</spage><epage>5549</epage><pages>5543-5549</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this article, an analytical model for the total-ionizing-dose (TID) radiation-induced electric field redistribution (RIER) in the drift region is established based on the Poisson equation, which explains the "slow-fast-slow" degradation trend of breakdown voltage (BV) of the shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET) with the increase of the radiation dose in the experiments. Moreover, a new radiation-hardened SGT MOSFET based on the internal electric field modulation (IEM-SGT) concept is proposed. The simulation shows that IEM-SGT can achieve five times better radiation resistance of BV than that of the non-hardened device, with a small deterioration in electrical performance.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2023.3319281</doi><tpages>7</tpages><orcidid>https://orcid.org/0009-0006-5540-0388</orcidid><orcidid>https://orcid.org/0000-0002-6762-2838</orcidid><orcidid>https://orcid.org/0000-0003-1288-1549</orcidid><orcidid>https://orcid.org/0009-0009-9580-6202</orcidid></addata></record> |
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| subjects | Breakdown voltage (BV) Degradation Electric fields Electron traps Field effect transistors internal electric field modulation (IEM) Logic gates Mathematical models Metal oxide semiconductors MOSFET MOSFETs Poisson equation Radiation dosage Radiation effects Radiation hardening radiation resistance Radiation tolerance radiation-induced electric field redistribution (RIER) Semiconductor device modeling Semiconductor devices shield gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET) total-ionizing-dose (TID) |
| title | Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET |
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