Effects of post-decoupled-plasma-nitridation annealing of ultra-thin gate oxide

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Hauptverfasser:	Lek, C.-M., Byung Jin Cho, Wei Yip Loh, Chew-Hoe Ang, Wenhe Lin, Yun-Ling Tan, Jia-Zheng Zhen, Lap Chan, Shyue Seng Tan, Tu Pei Chen
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing CMOS technology Computer aided manufacturing Drives Helium Laboratories Nitrogen Optical films Plasma temperature Silicon
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creator	Lek, C.-M. Byung Jin Cho Wei Yip Loh Chew-Hoe Ang Wenhe Lin Yun-Ling Tan Jia-Zheng Zhen Lap Chan Shyue Seng Tan Tu Pei Chen
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doi_str_mv	10.1109/IPFA.2002.1025669
format	Conference Proceeding
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Annealing CMOS technology Computer aided manufacturing Drives Helium Laboratories Nitrogen Optical films Plasma temperature Silicon
title	Effects of post-decoupled-plasma-nitridation annealing of ultra-thin gate oxide
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