Reliability of copper dual damascene influenced by pre-clean

Copper damascene processing was introduced to reduce circuit speed limiting interconnect RC delays. To prevent copper diffusion into the neighboring dielectric, copper is encapsulated into metallic and dielectric barriers. On the dual damascene level, prior to copper metallization, a pre-clean is ap...

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Bibliographische Detailangaben

Hauptverfasser:	Tokei, Zs, Lanckmans, F., Van den bosch, G., Van Hove, M., Maex, K., Bender, H., Hens, S., Van Landuyt, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Contact resistance Copper Delay Dielectrics Integrated circuit interconnections Metallization Sputtering Surface cleaning Surface resistance Surface treatment
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