High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model
The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability of electrical characteristics such as OFF-state leakage current, saturation current, and transconductance efficiency of fully depleted silic...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2023-09, Vol.70 (9), p.4786-4792 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4792 |
|---|---|
| container_issue | 9 |
| container_start_page | 4786 |
| container_title | IEEE transactions on electron devices |
| container_volume | 70 |
| creator | Xu, Lida Gao, Linchun Ni, Tao Wang, Juanjuan Cao, Zewen Li, Yifan Li, Xueqin Wang, Runjian Li, Xiaojing Yan, Weiwei Bu, Jianhui Li, Duoli Zeng, Chuanbin Li, Bo Luo, Jiajun |
| description | The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability of electrical characteristics such as OFF-state leakage current, saturation current, and transconductance efficiency of fully depleted silicon-on-insulator (FDSOI) and partially depleted silicon-on-insulator (PDSOI) in the temperature range of 25 °C-300 °C, we proposed a new semiconductor-parameter-temperature-increment (SPTI) model. Within this SPTI model, it can clarify the influence of high-temperature electrical parameters, \alpha _{T} and \beta _{T} , on the stability of the electrical characteristics of FDSOI and PDSOI. Thus, it helps in understanding the differences in the stability of electrical characteristics between the two devices. In addition, the SPTI model can also be used to obtain the design domain of the electrical characteristics for FDSOI and PDSOI. More importantly, a compromise method based on the design parameter \gamma can be obtained to effectively improve the electrical characteristics and the stability of the two devices. |
| doi_str_mv | 10.1109/TED.2023.3296713 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_10207775</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10207775</ieee_id><sourcerecordid>2855278030</sourcerecordid><originalsourceid>FETCH-LOGICAL-c245t-9eeb0723ceb5d5909e2e5569f9a223ae69ac94498b857949a89dba99c18c5f5c3</originalsourceid><addsrcrecordid>eNpNkE1PwkAQQDdGExG9e_CwiefifnS7O0dEFBIIJq1em-12KiWF4m458O8tgYOnySTvTSaPkEfORpwzeMmmbyPBhBxJAYnm8ooMuFI6giROrsmAMW4ikEbekrsQNv2axLEYkO9Z_bOOMtzu0dvu4JGmnS3qpu6OdLyzzTHUgbYVTVfzaLlK36dZoJO19dZ16OvQ1S7QVxuwpO2Opp_ZnC7bEpt7clPZJuDDZQ7JV69OZtFi9TGfjBeRE7HqIkAsmBbSYaFKBQxQoFIJVGCFkBYTsA7iGExhlIYYrIGysACOG6cq5eSQPJ_v7n37e8DQ5Zv24Pu_Qy6MUkIbJllPsTPlfBuCxyrf-3pr_THnLD_Vy_t6-alefqnXK09npUbEf7hgWmsl_wBNEGng</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2855278030</pqid></control><display><type>article</type><title>High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model</title><source>IEEE Electronic Library (IEL)</source><creator>Xu, Lida ; Gao, Linchun ; Ni, Tao ; Wang, Juanjuan ; Cao, Zewen ; Li, Yifan ; Li, Xueqin ; Wang, Runjian ; Li, Xiaojing ; Yan, Weiwei ; Bu, Jianhui ; Li, Duoli ; Zeng, Chuanbin ; Li, Bo ; Luo, Jiajun</creator><creatorcontrib>Xu, Lida ; Gao, Linchun ; Ni, Tao ; Wang, Juanjuan ; Cao, Zewen ; Li, Yifan ; Li, Xueqin ; Wang, Runjian ; Li, Xiaojing ; Yan, Weiwei ; Bu, Jianhui ; Li, Duoli ; Zeng, Chuanbin ; Li, Bo ; Luo, Jiajun</creatorcontrib><description><![CDATA[The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability of electrical characteristics such as OFF-state leakage current, saturation current, and transconductance efficiency of fully depleted silicon-on-insulator (FDSOI) and partially depleted silicon-on-insulator (PDSOI) in the temperature range of 25 °C-300 °C, we proposed a new semiconductor-parameter-temperature-increment (SPTI) model. Within this SPTI model, it can clarify the influence of high-temperature electrical parameters, <inline-formula> <tex-math notation="LaTeX">\alpha _{T} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\beta _{T} </tex-math></inline-formula>, on the stability of the electrical characteristics of FDSOI and PDSOI. Thus, it helps in understanding the differences in the stability of electrical characteristics between the two devices. In addition, the SPTI model can also be used to obtain the design domain of the electrical characteristics for FDSOI and PDSOI. More importantly, a compromise method based on the design parameter <inline-formula> <tex-math notation="LaTeX">\gamma </tex-math></inline-formula> can be obtained to effectively improve the electrical characteristics and the stability of the two devices.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3296713</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analog circuits ; Circuit stability ; Depletion ; Design domain ; Design parameters ; Digital electronics ; High temperature ; Leakage current ; Leakage currents ; Logic gates ; Mathematical models ; MOSFETs ; off-state leakage current ; output current ; Silicon ; Silicon-on-insulator ; silicon-on-insulator (SOI) ; SOI (semiconductors) ; Stability analysis ; Stability criteria ; Temperature distribution ; Thermal stability ; Transconductance ; transconductance efficiency</subject><ispartof>IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4786-4792</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-9eeb0723ceb5d5909e2e5569f9a223ae69ac94498b857949a89dba99c18c5f5c3</cites><orcidid>0009-0003-2951-2130 ; 0000-0002-5692-8997 ; 0000-0003-4905-2744 ; 0000-0003-3817-018X ; 0000-0002-0916-850X ; 0000-0003-0804-7236 ; 0000-0002-9029-9485</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10207775$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,27931,27932,54765</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10207775$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xu, Lida</creatorcontrib><creatorcontrib>Gao, Linchun</creatorcontrib><creatorcontrib>Ni, Tao</creatorcontrib><creatorcontrib>Wang, Juanjuan</creatorcontrib><creatorcontrib>Cao, Zewen</creatorcontrib><creatorcontrib>Li, Yifan</creatorcontrib><creatorcontrib>Li, Xueqin</creatorcontrib><creatorcontrib>Wang, Runjian</creatorcontrib><creatorcontrib>Li, Xiaojing</creatorcontrib><creatorcontrib>Yan, Weiwei</creatorcontrib><creatorcontrib>Bu, Jianhui</creatorcontrib><creatorcontrib>Li, Duoli</creatorcontrib><creatorcontrib>Zeng, Chuanbin</creatorcontrib><creatorcontrib>Li, Bo</creatorcontrib><creatorcontrib>Luo, Jiajun</creatorcontrib><title>High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability of electrical characteristics such as OFF-state leakage current, saturation current, and transconductance efficiency of fully depleted silicon-on-insulator (FDSOI) and partially depleted silicon-on-insulator (PDSOI) in the temperature range of 25 °C-300 °C, we proposed a new semiconductor-parameter-temperature-increment (SPTI) model. Within this SPTI model, it can clarify the influence of high-temperature electrical parameters, <inline-formula> <tex-math notation="LaTeX">\alpha _{T} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\beta _{T} </tex-math></inline-formula>, on the stability of the electrical characteristics of FDSOI and PDSOI. Thus, it helps in understanding the differences in the stability of electrical characteristics between the two devices. In addition, the SPTI model can also be used to obtain the design domain of the electrical characteristics for FDSOI and PDSOI. More importantly, a compromise method based on the design parameter <inline-formula> <tex-math notation="LaTeX">\gamma </tex-math></inline-formula> can be obtained to effectively improve the electrical characteristics and the stability of the two devices.]]></description><subject>Analog circuits</subject><subject>Circuit stability</subject><subject>Depletion</subject><subject>Design domain</subject><subject>Design parameters</subject><subject>Digital electronics</subject><subject>High temperature</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>Logic gates</subject><subject>Mathematical models</subject><subject>MOSFETs</subject><subject>off-state leakage current</subject><subject>output current</subject><subject>Silicon</subject><subject>Silicon-on-insulator</subject><subject>silicon-on-insulator (SOI)</subject><subject>SOI (semiconductors)</subject><subject>Stability analysis</subject><subject>Stability criteria</subject><subject>Temperature distribution</subject><subject>Thermal stability</subject><subject>Transconductance</subject><subject>transconductance efficiency</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1PwkAQQDdGExG9e_CwiefifnS7O0dEFBIIJq1em-12KiWF4m458O8tgYOnySTvTSaPkEfORpwzeMmmbyPBhBxJAYnm8ooMuFI6giROrsmAMW4ikEbekrsQNv2axLEYkO9Z_bOOMtzu0dvu4JGmnS3qpu6OdLyzzTHUgbYVTVfzaLlK36dZoJO19dZ16OvQ1S7QVxuwpO2Opp_ZnC7bEpt7clPZJuDDZQ7JV69OZtFi9TGfjBeRE7HqIkAsmBbSYaFKBQxQoFIJVGCFkBYTsA7iGExhlIYYrIGysACOG6cq5eSQPJ_v7n37e8DQ5Zv24Pu_Qy6MUkIbJllPsTPlfBuCxyrf-3pr_THnLD_Vy_t6-alefqnXK09npUbEf7hgWmsl_wBNEGng</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>Xu, Lida</creator><creator>Gao, Linchun</creator><creator>Ni, Tao</creator><creator>Wang, Juanjuan</creator><creator>Cao, Zewen</creator><creator>Li, Yifan</creator><creator>Li, Xueqin</creator><creator>Wang, Runjian</creator><creator>Li, Xiaojing</creator><creator>Yan, Weiwei</creator><creator>Bu, Jianhui</creator><creator>Li, Duoli</creator><creator>Zeng, Chuanbin</creator><creator>Li, Bo</creator><creator>Luo, Jiajun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0003-2951-2130</orcidid><orcidid>https://orcid.org/0000-0002-5692-8997</orcidid><orcidid>https://orcid.org/0000-0003-4905-2744</orcidid><orcidid>https://orcid.org/0000-0003-3817-018X</orcidid><orcidid>https://orcid.org/0000-0002-0916-850X</orcidid><orcidid>https://orcid.org/0000-0003-0804-7236</orcidid><orcidid>https://orcid.org/0000-0002-9029-9485</orcidid></search><sort><creationdate>20230901</creationdate><title>High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model</title><author>Xu, Lida ; Gao, Linchun ; Ni, Tao ; Wang, Juanjuan ; Cao, Zewen ; Li, Yifan ; Li, Xueqin ; Wang, Runjian ; Li, Xiaojing ; Yan, Weiwei ; Bu, Jianhui ; Li, Duoli ; Zeng, Chuanbin ; Li, Bo ; Luo, Jiajun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-9eeb0723ceb5d5909e2e5569f9a223ae69ac94498b857949a89dba99c18c5f5c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Analog circuits</topic><topic>Circuit stability</topic><topic>Depletion</topic><topic>Design domain</topic><topic>Design parameters</topic><topic>Digital electronics</topic><topic>High temperature</topic><topic>Leakage current</topic><topic>Leakage currents</topic><topic>Logic gates</topic><topic>Mathematical models</topic><topic>MOSFETs</topic><topic>off-state leakage current</topic><topic>output current</topic><topic>Silicon</topic><topic>Silicon-on-insulator</topic><topic>silicon-on-insulator (SOI)</topic><topic>SOI (semiconductors)</topic><topic>Stability analysis</topic><topic>Stability criteria</topic><topic>Temperature distribution</topic><topic>Thermal stability</topic><topic>Transconductance</topic><topic>transconductance efficiency</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Lida</creatorcontrib><creatorcontrib>Gao, Linchun</creatorcontrib><creatorcontrib>Ni, Tao</creatorcontrib><creatorcontrib>Wang, Juanjuan</creatorcontrib><creatorcontrib>Cao, Zewen</creatorcontrib><creatorcontrib>Li, Yifan</creatorcontrib><creatorcontrib>Li, Xueqin</creatorcontrib><creatorcontrib>Wang, Runjian</creatorcontrib><creatorcontrib>Li, Xiaojing</creatorcontrib><creatorcontrib>Yan, Weiwei</creatorcontrib><creatorcontrib>Bu, Jianhui</creatorcontrib><creatorcontrib>Li, Duoli</creatorcontrib><creatorcontrib>Zeng, Chuanbin</creatorcontrib><creatorcontrib>Li, Bo</creatorcontrib><creatorcontrib>Luo, Jiajun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xu, Lida</au><au>Gao, Linchun</au><au>Ni, Tao</au><au>Wang, Juanjuan</au><au>Cao, Zewen</au><au>Li, Yifan</au><au>Li, Xueqin</au><au>Wang, Runjian</au><au>Li, Xiaojing</au><au>Yan, Weiwei</au><au>Bu, Jianhui</au><au>Li, Duoli</au><au>Zeng, Chuanbin</au><au>Li, Bo</au><au>Luo, Jiajun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2023-09-01</date><risdate>2023</risdate><volume>70</volume><issue>9</issue><spage>4786</spage><epage>4792</epage><pages>4786-4792</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability of electrical characteristics such as OFF-state leakage current, saturation current, and transconductance efficiency of fully depleted silicon-on-insulator (FDSOI) and partially depleted silicon-on-insulator (PDSOI) in the temperature range of 25 °C-300 °C, we proposed a new semiconductor-parameter-temperature-increment (SPTI) model. Within this SPTI model, it can clarify the influence of high-temperature electrical parameters, <inline-formula> <tex-math notation="LaTeX">\alpha _{T} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\beta _{T} </tex-math></inline-formula>, on the stability of the electrical characteristics of FDSOI and PDSOI. Thus, it helps in understanding the differences in the stability of electrical characteristics between the two devices. In addition, the SPTI model can also be used to obtain the design domain of the electrical characteristics for FDSOI and PDSOI. More importantly, a compromise method based on the design parameter <inline-formula> <tex-math notation="LaTeX">\gamma </tex-math></inline-formula> can be obtained to effectively improve the electrical characteristics and the stability of the two devices.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2023.3296713</doi><tpages>7</tpages><orcidid>https://orcid.org/0009-0003-2951-2130</orcidid><orcidid>https://orcid.org/0000-0002-5692-8997</orcidid><orcidid>https://orcid.org/0000-0003-4905-2744</orcidid><orcidid>https://orcid.org/0000-0003-3817-018X</orcidid><orcidid>https://orcid.org/0000-0002-0916-850X</orcidid><orcidid>https://orcid.org/0000-0003-0804-7236</orcidid><orcidid>https://orcid.org/0000-0002-9029-9485</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4786-4792 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_10207775 |
| source | IEEE Electronic Library (IEL) |
| subjects | Analog circuits Circuit stability Depletion Design domain Design parameters Digital electronics High temperature Leakage current Leakage currents Logic gates Mathematical models MOSFETs off-state leakage current output current Silicon Silicon-on-insulator silicon-on-insulator (SOI) SOI (semiconductors) Stability analysis Stability criteria Temperature distribution Thermal stability Transconductance transconductance efficiency |
| title | High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T03%3A38%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Temperature%20Stability%20Analysis%20of%20SOI-MOSFETs%20Characteristics%20Based%20on%20SPTI%20Model&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Xu,%20Lida&rft.date=2023-09-01&rft.volume=70&rft.issue=9&rft.spage=4786&rft.epage=4792&rft.pages=4786-4792&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2023.3296713&rft_dat=%3Cproquest_RIE%3E2855278030%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2855278030&rft_id=info:pmid/&rft_ieee_id=10207775&rfr_iscdi=true |