Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate

In this study, the electrical characteristics and hot-carrier reliability are investigated in via-contact type amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) with different field-plate structures, generally used as a light-shielding layer. Compared to a conventional symmetric struc...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-09, Vol.70 (9), p.4669-4673
Hauptverfasser:	Tu, Yu-Fa, Huang, Jen-Wei, Chang, Ting-Chang, Hung, Yang-Hao, Tai, Mao-Chou, Chen, Jian-Jie, Lin, Shih-Kai, Zhou, Kuan-Ju, Chien, Ya-Ting, Huang, Hui-Chun, Lien, Chen-Hsin
Format:	Artikel
Sprache:	eng
Schlagworte:	Active-matrix organic light-emitting diode (AM-OLED) amorphous indium–gallium–zinc oxide (a-IGZO) Asymmetric structures Current carriers Electric contacts Electrodes Energy bands field plate Gallium Hot carriers hot-carrier stress (HCS) Indium gallium zinc oxide Logic gates Metals Organic light emitting diodes Reliability saturated output current characteristic Semiconductor devices Stability analysis Thin film transistors thin-film transistor (TFT) Wires Zinc oxide
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