Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate
In this study, the electrical characteristics and hot-carrier reliability are investigated in via-contact type amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) with different field-plate structures, generally used as a light-shielding layer. Compared to a conventional symmetric struc...
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| Veröffentlicht in: | IEEE transactions on electron devices 2023-09, Vol.70 (9), p.4669-4673 |
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| creator | Tu, Yu-Fa Huang, Jen-Wei Chang, Ting-Chang Hung, Yang-Hao Tai, Mao-Chou Chen, Jian-Jie Lin, Shih-Kai Zhou, Kuan-Ju Chien, Ya-Ting Huang, Hui-Chun Lien, Chen-Hsin |
| description | In this study, the electrical characteristics and hot-carrier reliability are investigated in via-contact type amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) with different field-plate structures, generally used as a light-shielding layer. Compared to a conventional symmetric structure, the output current characteristics of the asymmetric structures with a source-connected (drain-connected) field plate are more saturated (unsaturated). The source-connected field plate (SCFP) structure exhibits a good channel control ability, which can effectively suppress the drain-induced barrier-lowering effect and improve the IR-drop phenomena to achieve uniform brightness in each pixel over a large-area display. In addition, this structure demonstrates a good hot-carrier stress (HCS) stability confirmed by simulations and energy bands analysis. Based on the results of this study, it is proposed that the SCFP structure with stably saturated output current characteristics and HCS reliability is suitable for driving TFTs in active-matrix organic light-emitting diode (AM-OLED) applications. |
| doi_str_mv | 10.1109/TED.2023.3296391 |
| format | Article |
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Compared to a conventional symmetric structure, the output current characteristics of the asymmetric structures with a source-connected (drain-connected) field plate are more saturated (unsaturated). The source-connected field plate (SCFP) structure exhibits a good channel control ability, which can effectively suppress the drain-induced barrier-lowering effect and improve the IR-drop phenomena to achieve uniform brightness in each pixel over a large-area display. In addition, this structure demonstrates a good hot-carrier stress (HCS) stability confirmed by simulations and energy bands analysis. Based on the results of this study, it is proposed that the SCFP structure with stably saturated output current characteristics and HCS reliability is suitable for driving TFTs in active-matrix organic light-emitting diode (AM-OLED) applications.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3296391</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active-matrix organic light-emitting diode (AM-OLED) ; amorphous indium–gallium–zinc oxide (a-IGZO) ; Asymmetric structures ; Current carriers ; Electric contacts ; Electrodes ; Energy bands ; field plate ; Gallium ; Hot carriers ; hot-carrier stress (HCS) ; Indium gallium zinc oxide ; Logic gates ; Metals ; Organic light emitting diodes ; Reliability ; saturated output current characteristic ; Semiconductor devices ; Stability analysis ; Thin film transistors ; thin-film transistor (TFT) ; Wires ; Zinc oxide</subject><ispartof>IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4669-4673</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-73b87bbf2afb2edd868a978462e23a1d302cbe00bcb42862b3e3be2c2fffab4e3</citedby><cites>FETCH-LOGICAL-c292t-73b87bbf2afb2edd868a978462e23a1d302cbe00bcb42862b3e3be2c2fffab4e3</cites><orcidid>0000-0002-8840-6763 ; 0000-0002-5301-6693 ; 0000-0001-6639-9964 ; 0000-0003-0820-8175</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10194559$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10194559$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tu, Yu-Fa</creatorcontrib><creatorcontrib>Huang, Jen-Wei</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Hung, Yang-Hao</creatorcontrib><creatorcontrib>Tai, Mao-Chou</creatorcontrib><creatorcontrib>Chen, Jian-Jie</creatorcontrib><creatorcontrib>Lin, Shih-Kai</creatorcontrib><creatorcontrib>Zhou, Kuan-Ju</creatorcontrib><creatorcontrib>Chien, Ya-Ting</creatorcontrib><creatorcontrib>Huang, Hui-Chun</creatorcontrib><creatorcontrib>Lien, Chen-Hsin</creatorcontrib><title>Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this study, the electrical characteristics and hot-carrier reliability are investigated in via-contact type amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) with different field-plate structures, generally used as a light-shielding layer. Compared to a conventional symmetric structure, the output current characteristics of the asymmetric structures with a source-connected (drain-connected) field plate are more saturated (unsaturated). The source-connected field plate (SCFP) structure exhibits a good channel control ability, which can effectively suppress the drain-induced barrier-lowering effect and improve the IR-drop phenomena to achieve uniform brightness in each pixel over a large-area display. In addition, this structure demonstrates a good hot-carrier stress (HCS) stability confirmed by simulations and energy bands analysis. Based on the results of this study, it is proposed that the SCFP structure with stably saturated output current characteristics and HCS reliability is suitable for driving TFTs in active-matrix organic light-emitting diode (AM-OLED) applications.</description><subject>Active-matrix organic light-emitting diode (AM-OLED)</subject><subject>amorphous indium–gallium–zinc oxide (a-IGZO)</subject><subject>Asymmetric structures</subject><subject>Current carriers</subject><subject>Electric contacts</subject><subject>Electrodes</subject><subject>Energy bands</subject><subject>field plate</subject><subject>Gallium</subject><subject>Hot carriers</subject><subject>hot-carrier stress (HCS)</subject><subject>Indium gallium zinc oxide</subject><subject>Logic gates</subject><subject>Metals</subject><subject>Organic light emitting diodes</subject><subject>Reliability</subject><subject>saturated output current characteristic</subject><subject>Semiconductor devices</subject><subject>Stability analysis</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>Wires</subject><subject>Zinc oxide</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE9rGzEUxEVpoW7aew89CHqWIz3tH-lYtnESCLjUDoFeFkn7FitstK6kPfhb9CNXxjnkNDyYeTP8CPkq-FoIrq_3Nz_XwEGuJehGavGOrERdt0w3VfOerDgXimmp5EfyKaXncjZVBSvyb5eNnU50Z_ISTcaBbpd8XDLtlhgxFD2YaFzG6FP2LlETBno3Z9aZGD1G-hsnb6yffD7ReaSG3Ydb8yds6f7gA9v46YXuowmpxOeY6JPPB7qbl-iQdXMI6M6dG4_TQH9NZcBn8mE0U8Ivr3pFHjc3--6OPWxv77sfD8yBhsxaaVVr7QhmtIDDoBpldKuqBhCkEYPk4Cxybp2tQDVgJUqL4GAcR2MrlFfk--XvMc5_F0y5fy6rQqnsQdU1tAoqUVz84nJxTini2B-jfzHx1Aven7n3hXt_5t6_ci-Rb5eIR8Q3dqGrutbyPzNMgW8</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>Tu, Yu-Fa</creator><creator>Huang, Jen-Wei</creator><creator>Chang, Ting-Chang</creator><creator>Hung, Yang-Hao</creator><creator>Tai, Mao-Chou</creator><creator>Chen, Jian-Jie</creator><creator>Lin, Shih-Kai</creator><creator>Zhou, Kuan-Ju</creator><creator>Chien, Ya-Ting</creator><creator>Huang, Hui-Chun</creator><creator>Lien, Chen-Hsin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8840-6763</orcidid><orcidid>https://orcid.org/0000-0002-5301-6693</orcidid><orcidid>https://orcid.org/0000-0001-6639-9964</orcidid><orcidid>https://orcid.org/0000-0003-0820-8175</orcidid></search><sort><creationdate>20230901</creationdate><title>Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate</title><author>Tu, Yu-Fa ; Huang, Jen-Wei ; Chang, Ting-Chang ; Hung, Yang-Hao ; Tai, Mao-Chou ; Chen, Jian-Jie ; Lin, Shih-Kai ; Zhou, Kuan-Ju ; Chien, Ya-Ting ; Huang, Hui-Chun ; Lien, Chen-Hsin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-73b87bbf2afb2edd868a978462e23a1d302cbe00bcb42862b3e3be2c2fffab4e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Active-matrix organic light-emitting diode (AM-OLED)</topic><topic>amorphous indium–gallium–zinc oxide (a-IGZO)</topic><topic>Asymmetric structures</topic><topic>Current carriers</topic><topic>Electric contacts</topic><topic>Electrodes</topic><topic>Energy bands</topic><topic>field plate</topic><topic>Gallium</topic><topic>Hot carriers</topic><topic>hot-carrier stress (HCS)</topic><topic>Indium gallium zinc oxide</topic><topic>Logic gates</topic><topic>Metals</topic><topic>Organic light emitting diodes</topic><topic>Reliability</topic><topic>saturated output current characteristic</topic><topic>Semiconductor devices</topic><topic>Stability analysis</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>Wires</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tu, Yu-Fa</creatorcontrib><creatorcontrib>Huang, Jen-Wei</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Hung, Yang-Hao</creatorcontrib><creatorcontrib>Tai, Mao-Chou</creatorcontrib><creatorcontrib>Chen, Jian-Jie</creatorcontrib><creatorcontrib>Lin, Shih-Kai</creatorcontrib><creatorcontrib>Zhou, Kuan-Ju</creatorcontrib><creatorcontrib>Chien, Ya-Ting</creatorcontrib><creatorcontrib>Huang, Hui-Chun</creatorcontrib><creatorcontrib>Lien, Chen-Hsin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tu, Yu-Fa</au><au>Huang, Jen-Wei</au><au>Chang, Ting-Chang</au><au>Hung, Yang-Hao</au><au>Tai, Mao-Chou</au><au>Chen, Jian-Jie</au><au>Lin, Shih-Kai</au><au>Zhou, Kuan-Ju</au><au>Chien, Ya-Ting</au><au>Huang, Hui-Chun</au><au>Lien, Chen-Hsin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2023-09-01</date><risdate>2023</risdate><volume>70</volume><issue>9</issue><spage>4669</spage><epage>4673</epage><pages>4669-4673</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this study, the electrical characteristics and hot-carrier reliability are investigated in via-contact type amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) with different field-plate structures, generally used as a light-shielding layer. Compared to a conventional symmetric structure, the output current characteristics of the asymmetric structures with a source-connected (drain-connected) field plate are more saturated (unsaturated). The source-connected field plate (SCFP) structure exhibits a good channel control ability, which can effectively suppress the drain-induced barrier-lowering effect and improve the IR-drop phenomena to achieve uniform brightness in each pixel over a large-area display. In addition, this structure demonstrates a good hot-carrier stress (HCS) stability confirmed by simulations and energy bands analysis. Based on the results of this study, it is proposed that the SCFP structure with stably saturated output current characteristics and HCS reliability is suitable for driving TFTs in active-matrix organic light-emitting diode (AM-OLED) applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2023.3296391</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-8840-6763</orcidid><orcidid>https://orcid.org/0000-0002-5301-6693</orcidid><orcidid>https://orcid.org/0000-0001-6639-9964</orcidid><orcidid>https://orcid.org/0000-0003-0820-8175</orcidid></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4669-4673 |
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| subjects | Active-matrix organic light-emitting diode (AM-OLED) amorphous indium–gallium–zinc oxide (a-IGZO) Asymmetric structures Current carriers Electric contacts Electrodes Energy bands field plate Gallium Hot carriers hot-carrier stress (HCS) Indium gallium zinc oxide Logic gates Metals Organic light emitting diodes Reliability saturated output current characteristic Semiconductor devices Stability analysis Thin film transistors thin-film transistor (TFT) Wires Zinc oxide |
| title | Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate |
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