Compact Wideband Millimeter-Wave ESD Protection Device With Transformer-Embedded DCSCR
This letter presents a novel structure for electrostatic discharge (ESD) protection of millimeter wave (mm-wave) input/output (I/O). The proposed structure features a meticulously embedded transformer in the direct-connected silicon-controlled rectifier (DCSCR), which ensures wideband lossless perfo...
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| Veröffentlicht in: | IEEE electron device letters 2023-09, Vol.44 (9), p.1-1 |
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| container_title | IEEE electron device letters |
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| creator | Han, Aoran Liu, Yi Liu, Zhiwei Luo, Xun |
| description | This letter presents a novel structure for electrostatic discharge (ESD) protection of millimeter wave (mm-wave) input/output (I/O). The proposed structure features a meticulously embedded transformer in the direct-connected silicon-controlled rectifier (DCSCR), which ensures wideband lossless performance through the resonance between the transformer and parasitic capacitance in DCSCR. In addition, the proposed structure sets a precedent for placing ESD protection devices beneath the inductors with a floating shield, which results in an efficient saving of silicon footprint. Verified in a 40-nm CMOS process, the proposed structure demostrates a 2.55 kV HBM level, 27.5-50 GHz bandwidth, 0.65 ns turn-on time and occupies only 88.2×88.2 μm 2 . |
| doi_str_mv | 10.1109/LED.2023.3296756 |
| format | Article |
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The proposed structure features a meticulously embedded transformer in the direct-connected silicon-controlled rectifier (DCSCR), which ensures wideband lossless performance through the resonance between the transformer and parasitic capacitance in DCSCR. In addition, the proposed structure sets a precedent for placing ESD protection devices beneath the inductors with a floating shield, which results in an efficient saving of silicon footprint. Verified in a 40-nm CMOS process, the proposed structure demostrates a 2.55 kV HBM level, 27.5-50 GHz bandwidth, 0.65 ns turn-on time and occupies only 88.2×88.2 μm 2 .</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2023.3296756</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Broadband ; Electrostatic discharge (ESD) ; Electrostatic discharge protection ; Electrostatic discharges ; floating shield ; Inductors ; millimeter wave (mm-wave) ; Millimeter waves ; Parasitics (electronics) ; Performance evaluation ; Radio frequency ; Silicon controlled rectifiers ; silicon-controlled rectifier (SCR) ; Transformers ; Voltage measurement ; Wideband</subject><ispartof>IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c287t-b41cc3ef54db7cb4c76b0cd840a434f950f1758b723e325846d1e968762ce2eb3</cites><orcidid>0000-0003-2430-4925 ; 0000-0002-1318-9418 ; 0000-0003-0805-5930 ; 0009-0001-0351-5259</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10192488$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids></links><search><creatorcontrib>Han, Aoran</creatorcontrib><creatorcontrib>Liu, Yi</creatorcontrib><creatorcontrib>Liu, Zhiwei</creatorcontrib><creatorcontrib>Luo, Xun</creatorcontrib><title>Compact Wideband Millimeter-Wave ESD Protection Device With Transformer-Embedded DCSCR</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter presents a novel structure for electrostatic discharge (ESD) protection of millimeter wave (mm-wave) input/output (I/O). The proposed structure features a meticulously embedded transformer in the direct-connected silicon-controlled rectifier (DCSCR), which ensures wideband lossless performance through the resonance between the transformer and parasitic capacitance in DCSCR. In addition, the proposed structure sets a precedent for placing ESD protection devices beneath the inductors with a floating shield, which results in an efficient saving of silicon footprint. Verified in a 40-nm CMOS process, the proposed structure demostrates a 2.55 kV HBM level, 27.5-50 GHz bandwidth, 0.65 ns turn-on time and occupies only 88.2×88.2 μm 2 .</description><subject>Broadband</subject><subject>Electrostatic discharge (ESD)</subject><subject>Electrostatic discharge protection</subject><subject>Electrostatic discharges</subject><subject>floating shield</subject><subject>Inductors</subject><subject>millimeter wave (mm-wave)</subject><subject>Millimeter waves</subject><subject>Parasitics (electronics)</subject><subject>Performance evaluation</subject><subject>Radio frequency</subject><subject>Silicon controlled rectifiers</subject><subject>silicon-controlled rectifier (SCR)</subject><subject>Transformers</subject><subject>Voltage measurement</subject><subject>Wideband</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNpNkDtPwzAYRS0EEqWwMzBEYk7x286IkvCQikC00NGK7S8iVZMUO63EvydVGZjucu690kHomuAZITi7m5fFjGLKZoxmUgl5giZECJ1iIdkpmmDFScoIlufoIsY1xoRzxSfoM-_bbeWGZNV4sFXnk5dms2laGCCkq2oPSbkokrfQD-CGpu-SAvaNgxEfvpJlqLpY96Ed2bK14D34pMgX-fslOqurTYSrv5yij4dymT-l89fH5_x-njqq1ZBaTpxjUAvurXKWOyUtdl5zXHHG60zgmiihraIMGBWaS08gk1pJ6oCCZVN0e9zdhv57B3Ew634XuvHSUC0UzqQQaqTwkXKhjzFAbbahaavwYwg2B3tmtGcO9syfvbFyc6w0APAPJxnlWrNffrFqCg</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>Han, Aoran</creator><creator>Liu, Yi</creator><creator>Liu, Zhiwei</creator><creator>Luo, Xun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2430-4925</orcidid><orcidid>https://orcid.org/0000-0002-1318-9418</orcidid><orcidid>https://orcid.org/0000-0003-0805-5930</orcidid><orcidid>https://orcid.org/0009-0001-0351-5259</orcidid></search><sort><creationdate>20230901</creationdate><title>Compact Wideband Millimeter-Wave ESD Protection Device With Transformer-Embedded DCSCR</title><author>Han, Aoran ; Liu, Yi ; Liu, Zhiwei ; Luo, Xun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-b41cc3ef54db7cb4c76b0cd840a434f950f1758b723e325846d1e968762ce2eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Broadband</topic><topic>Electrostatic discharge (ESD)</topic><topic>Electrostatic discharge protection</topic><topic>Electrostatic discharges</topic><topic>floating shield</topic><topic>Inductors</topic><topic>millimeter wave (mm-wave)</topic><topic>Millimeter waves</topic><topic>Parasitics (electronics)</topic><topic>Performance evaluation</topic><topic>Radio frequency</topic><topic>Silicon controlled rectifiers</topic><topic>silicon-controlled rectifier (SCR)</topic><topic>Transformers</topic><topic>Voltage measurement</topic><topic>Wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han, Aoran</creatorcontrib><creatorcontrib>Liu, Yi</creatorcontrib><creatorcontrib>Liu, Zhiwei</creatorcontrib><creatorcontrib>Luo, Xun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Xplore Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Han, Aoran</au><au>Liu, Yi</au><au>Liu, Zhiwei</au><au>Luo, Xun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compact Wideband Millimeter-Wave ESD Protection Device With Transformer-Embedded DCSCR</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2023-09-01</date><risdate>2023</risdate><volume>44</volume><issue>9</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter presents a novel structure for electrostatic discharge (ESD) protection of millimeter wave (mm-wave) input/output (I/O). The proposed structure features a meticulously embedded transformer in the direct-connected silicon-controlled rectifier (DCSCR), which ensures wideband lossless performance through the resonance between the transformer and parasitic capacitance in DCSCR. In addition, the proposed structure sets a precedent for placing ESD protection devices beneath the inductors with a floating shield, which results in an efficient saving of silicon footprint. Verified in a 40-nm CMOS process, the proposed structure demostrates a 2.55 kV HBM level, 27.5-50 GHz bandwidth, 0.65 ns turn-on time and occupies only 88.2×88.2 μm 2 .</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2023.3296756</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0003-2430-4925</orcidid><orcidid>https://orcid.org/0000-0002-1318-9418</orcidid><orcidid>https://orcid.org/0000-0003-0805-5930</orcidid><orcidid>https://orcid.org/0009-0001-0351-5259</orcidid><oa>free_for_read</oa></addata></record> |
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| source | IEEE |
| subjects | Broadband Electrostatic discharge (ESD) Electrostatic discharge protection Electrostatic discharges floating shield Inductors millimeter wave (mm-wave) Millimeter waves Parasitics (electronics) Performance evaluation Radio frequency Silicon controlled rectifiers silicon-controlled rectifier (SCR) Transformers Voltage measurement Wideband |
| title | Compact Wideband Millimeter-Wave ESD Protection Device With Transformer-Embedded DCSCR |
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