Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-compatible MTJ Stacks

The magnetic tunnel junction (MTJ) is a highly versatile device widely used in today's spintronic applications such as magnetoresistive random-access memory (MRAM), magnetic sensors and prospectively as a read device in racetrack memory. Tuning the perpendicular (p-)MTJ stack to match the desir...

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Veröffentlicht in:	IEEE transactions on magnetics 2023-11, Vol.59 (11), p.1-1
Hauptverfasser:	Durner, Christoph, Lederer, Maximilian, Gurieva, Tatiana, Hertel, Johannes, Hindenberg, Meike, Gerlich, Lukas, Wagner-Reetz, Maik, Parkin, Stuart
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS technology Coercivity Deposition Electrical properties Electrical resistance measurement Extraterrestrial measurements Magnetic anisotropy Magnetic field measurement Magnetic properties magnetic tunnel junctions (MTJs) Magnetic tunneling Magnetism Magnetization Magnetoresistivity Optimization perpendicular magnetic anisotropy Random access memory Resistance Surface roughness Thickness Thickness measurement Tunnel junctions Tunnel magnetoresistance
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