State of the art of InP and GaAs quantum cascade lasers

The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. Hig...

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Hauptverfasser:	Scamarcio, G., Spagnolo, V., Troccoli, M., Zanolli, Z., Rizzi, F., Vitiello, M., Marano, D., Sabato, A., Catalano, I.M., Sibilano, M., Calabrese, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrical resistance measurement electron-phonon interaction GaAs-AlGaAs Gallium arsenide hot carriers Indium phosphide Laser theory Luminescence micro-probe luminescence mearutement micro-probe Raman measurements Monitoring Physical, chemical, mathematical & earth Sciences Physics Physique Physique, chimie, mathématiques & sciences de la terre Quantum cascade lasers Superlattices Temperature distribution Thermal resistance
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Beschreibung
Zusammenfassung:	The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2002.1014626