MOSFET-Based RF Switch With Active Biasing
A biasing method for a stacked field-effect transistor (FET)-based radio-frequency (RF) switch is proposed. The advantage of the method over conventional passive resistive biasing is the ability to sustain a desirable operating point under the peak RF excitation conditions achieved by compensating t...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2023-12, Vol.71 (12), p.1-9 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 71 |
| creator | Solomko, Valentyn Syroiezhin, Semen Tayari, Danial Essel, Jochen Weigel, Robert |
| description | A biasing method for a stacked field-effect transistor (FET)-based radio-frequency (RF) switch is proposed. The advantage of the method over conventional passive resistive biasing is the ability to sustain a desirable operating point under the peak RF excitation conditions achieved by compensating the excessive leakage current of FETs in the stack. Operating point stabilization results in improved RF voltage-handling capabilities of the OFF-state switch. A single-pole double-throw (SPDT) hardware demonstrator implemented in a dedicated 130-nm bulk-CMOS RF switch technology shows an increase in breakdown voltage by 10% for a 35-V voltage-handling class switch device. The improvement is achieved at the expense of increased peak current consumption and no penalty in the RF performance of the switch. |
| doi_str_mv | 10.1109/TMTT.2023.3279909 |
| format | Article |
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The advantage of the method over conventional passive resistive biasing is the ability to sustain a desirable operating point under the peak RF excitation conditions achieved by compensating the excessive leakage current of FETs in the stack. Operating point stabilization results in improved RF voltage-handling capabilities of the OFF-state switch. A single-pole double-throw (SPDT) hardware demonstrator implemented in a dedicated 130-nm bulk-CMOS RF switch technology shows an increase in breakdown voltage by 10% for a 35-V voltage-handling class switch device. The improvement is achieved at the expense of increased peak current consumption and no penalty in the RF performance of the switch.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2023.3279909</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-3131-1800</orcidid><orcidid>https://orcid.org/0000-0002-4706-8825</orcidid><orcidid>https://orcid.org/0000-0002-7689-8529</orcidid></addata></record> |
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| issn | 0018-9480 1557-9670 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Antenna tuning aperture tuning compensation Electric potential Field effect transistors high-voltage switch leakage Leakage current Leakage currents Logic gates MOSFET MOSFET switch Radio frequency Semiconductor devices Switches Switching circuits Voltage voltage mirror |
| title | MOSFET-Based RF Switch With Active Biasing |
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