InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate
We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide s...
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| creator | Shin-Jae Kang Jae-Chun Han Jeong-Hoon Kim Seong-June Jo Seong-Wung Park Jong-In Song |
| description | We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5/spl times/50 /spl mu/m/sup 2/ depletion-mode In/sub 0.53/Ga/sub 0.47/Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The f/sub T/ and f/sub max/ of the In/sub 0.53/Ga/sub 0.47/As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively. |
| doi_str_mv | 10.1109/ICIPRM.2002.1014307 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1014307</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1014307</ieee_id><sourcerecordid>1014307</sourcerecordid><originalsourceid>FETCH-LOGICAL-i88t-da898030e098a08cdc1e6b57ae238879f9016f62ed34ea1e0a943a7702d43e0f3</originalsourceid><addsrcrecordid>eNotT9tqwkAUXGgLFZsv8GV_IPbsxezuo4TWBhSl9V2O2ZO4JU2siVD9-i7oMDAvM8MMYxMBUyHAvRZ5sflcTSWAnAoQWoF5YIkzFiKVURL0IxtFp0xtlrlnlvT9N0TomQYQI1YU7SbdY0-er9Zf729bPlB5aLumqy_8PIQmXENbc-RN-D0Hz4-H6OXdX_DhGjNFu8B5z2sc6IU9Vdj0lNx1zLaxLv9Il-tFkc-XabB2SD1aF5cBgbMItvSloGw_M0hSWWtc5UBkVSbJK00oCNBphcaA9FoRVGrMJrfaQES74yn84Omyu39X_yq1THo</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Shin-Jae Kang ; Jae-Chun Han ; Jeong-Hoon Kim ; Seong-June Jo ; Seong-Wung Park ; Jong-In Song</creator><creatorcontrib>Shin-Jae Kang ; Jae-Chun Han ; Jeong-Hoon Kim ; Seong-June Jo ; Seong-Wung Park ; Jong-In Song</creatorcontrib><description>We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5/spl times/50 /spl mu/m/sup 2/ depletion-mode In/sub 0.53/Ga/sub 0.47/Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The f/sub T/ and f/sub max/ of the In/sub 0.53/Ga/sub 0.47/As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 9780780373204</identifier><identifier>ISBN: 0780373200</identifier><identifier>DOI: 10.1109/ICIPRM.2002.1014307</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance-voltage characteristics ; Hysteresis ; Indium gallium arsenide ; Leakage current ; Lithography ; MOSFET circuits ; Optical saturation ; Oxidation ; Plasma applications ; Plasma properties</subject><ispartof>Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.193-196</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1014307$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,4035,4036,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1014307$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shin-Jae Kang</creatorcontrib><creatorcontrib>Jae-Chun Han</creatorcontrib><creatorcontrib>Jeong-Hoon Kim</creatorcontrib><creatorcontrib>Seong-June Jo</creatorcontrib><creatorcontrib>Seong-Wung Park</creatorcontrib><creatorcontrib>Jong-In Song</creatorcontrib><title>InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate</title><title>Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)</title><addtitle>ICIPRM</addtitle><description>We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5/spl times/50 /spl mu/m/sup 2/ depletion-mode In/sub 0.53/Ga/sub 0.47/Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The f/sub T/ and f/sub max/ of the In/sub 0.53/Ga/sub 0.47/As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively.</description><subject>Capacitance-voltage characteristics</subject><subject>Hysteresis</subject><subject>Indium gallium arsenide</subject><subject>Leakage current</subject><subject>Lithography</subject><subject>MOSFET circuits</subject><subject>Optical saturation</subject><subject>Oxidation</subject><subject>Plasma applications</subject><subject>Plasma properties</subject><issn>1092-8669</issn><isbn>9780780373204</isbn><isbn>0780373200</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotT9tqwkAUXGgLFZsv8GV_IPbsxezuo4TWBhSl9V2O2ZO4JU2siVD9-i7oMDAvM8MMYxMBUyHAvRZ5sflcTSWAnAoQWoF5YIkzFiKVURL0IxtFp0xtlrlnlvT9N0TomQYQI1YU7SbdY0-er9Zf729bPlB5aLumqy_8PIQmXENbc-RN-D0Hz4-H6OXdX_DhGjNFu8B5z2sc6IU9Vdj0lNx1zLaxLv9Il-tFkc-XabB2SD1aF5cBgbMItvSloGw_M0hSWWtc5UBkVSbJK00oCNBphcaA9FoRVGrMJrfaQES74yn84Omyu39X_yq1THo</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Shin-Jae Kang</creator><creator>Jae-Chun Han</creator><creator>Jeong-Hoon Kim</creator><creator>Seong-June Jo</creator><creator>Seong-Wung Park</creator><creator>Jong-In Song</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2002</creationdate><title>InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate</title><author>Shin-Jae Kang ; Jae-Chun Han ; Jeong-Hoon Kim ; Seong-June Jo ; Seong-Wung Park ; Jong-In Song</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i88t-da898030e098a08cdc1e6b57ae238879f9016f62ed34ea1e0a943a7702d43e0f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Capacitance-voltage characteristics</topic><topic>Hysteresis</topic><topic>Indium gallium arsenide</topic><topic>Leakage current</topic><topic>Lithography</topic><topic>MOSFET circuits</topic><topic>Optical saturation</topic><topic>Oxidation</topic><topic>Plasma applications</topic><topic>Plasma properties</topic><toplevel>online_resources</toplevel><creatorcontrib>Shin-Jae Kang</creatorcontrib><creatorcontrib>Jae-Chun Han</creatorcontrib><creatorcontrib>Jeong-Hoon Kim</creatorcontrib><creatorcontrib>Seong-June Jo</creatorcontrib><creatorcontrib>Seong-Wung Park</creatorcontrib><creatorcontrib>Jong-In Song</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shin-Jae Kang</au><au>Jae-Chun Han</au><au>Jeong-Hoon Kim</au><au>Seong-June Jo</au><au>Seong-Wung Park</au><au>Jong-In Song</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate</atitle><btitle>Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)</btitle><stitle>ICIPRM</stitle><date>2002</date><risdate>2002</risdate><spage>193</spage><epage>196</epage><pages>193-196</pages><issn>1092-8669</issn><isbn>9780780373204</isbn><isbn>0780373200</isbn><abstract>We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5/spl times/50 /spl mu/m/sup 2/ depletion-mode In/sub 0.53/Ga/sub 0.47/Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The f/sub T/ and f/sub max/ of the In/sub 0.53/Ga/sub 0.47/As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2002.1014307</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1092-8669 |
| ispartof | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.193-196 |
| issn | 1092-8669 |
| language | eng |
| recordid | cdi_ieee_primary_1014307 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance-voltage characteristics Hysteresis Indium gallium arsenide Leakage current Lithography MOSFET circuits Optical saturation Oxidation Plasma applications Plasma properties |
| title | InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T05%3A37%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=InP-based%20MOSFET%20technology%20utilizing%20a%20liquid%20phase%20oxidized%20InGaAs%20gate&rft.btitle=Conference%20Proceedings.%2014th%20Indium%20Phosphide%20and%20Related%20Materials%20Conference%20(Cat.%20No.02CH37307)&rft.au=Shin-Jae%20Kang&rft.date=2002&rft.spage=193&rft.epage=196&rft.pages=193-196&rft.issn=1092-8669&rft.isbn=9780780373204&rft.isbn_list=0780373200&rft_id=info:doi/10.1109/ICIPRM.2002.1014307&rft_dat=%3Cieee_6IE%3E1014307%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1014307&rfr_iscdi=true |