Lightweight Read Reference Voltage Calibration Strategy for Improving 3-D TLC NAND Flash Memory Reliability

Flash memory has gradually become the dominant storage device in the consumer market and data centers since the storage capacity increases and production costs decline. Unfortunately, as the bit density of flash memory increased, the severity of reliability issues has escalated. Read retry is necess...

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Veröffentlicht in:	IEEE transactions on device and materials reliability 2023-09, Vol.23 (3), p.1-1
Hauptverfasser:	Feng, Hua, Wei, Debao, Wang, Yongchao, Song, Yu, Piao, Zhelong, Qiao, Liyan
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	3-D NAND Flash Adaptation models Bit error rate Calibration Data centers Errors Flash memories Flash memory (computers) Interlayers Lightweight Materials reliability Memory test Optimization Production costs Read reference voltage Reliability Storage capacity Storage reliability Three-dimensional displays Threshold voltage Voltage control
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