CuO-Based Solar-Blind Photodetector for Flexible Electronics

Flexible UV-C i.e. solar-blind detectors are in high demand, not only due to their potential for non-line of sight communication, and environmental monitoring but also for medical technology. Now-a-days, the development of UV-C (200 nm to 270 nm) light sources and detectors is highly essential. Here...

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Veröffentlicht in:IEEE photonics technology letters 2023-06, Vol.35 (12), p.692-695
Hauptverfasser: Dixit, Tejendra, Solanke, Swanand V., Ganapathi, Kolla Lakshmi, Singh, Vipul
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container_end_page 695
container_issue 12
container_start_page 692
container_title IEEE photonics technology letters
container_volume 35
creator Dixit, Tejendra
Solanke, Swanand V.
Ganapathi, Kolla Lakshmi
Singh, Vipul
description Flexible UV-C i.e. solar-blind detectors are in high demand, not only due to their potential for non-line of sight communication, and environmental monitoring but also for medical technology. Now-a-days, the development of UV-C (200 nm to 270 nm) light sources and detectors is highly essential. Herein, we report the fabrication of UV-C photodetector using ultra-wide bandgap CuO nanostructures (NSs) with \text{E}_{\mathbf {g}} =3.98 eV, on a flexible substrate. All solution-based technique was followed for the growth of CuO NSs on poly-ethylene terephthalate (PET) substrate. The as-fabricated device has shown photo-sensitivity of \sim 15, photo-responsivity of \sim 485 mA/W and photo-detectivity of \sim \,\,1.4\times 10^{11} Jones with 220 nm excitation (at −20 V applied bias). Moreover, the external quantum efficiency (EQE) and linear-dynamic range (LDR) of the device were calculated to be 74 % and 56 dB, respectively at 220 nm excitation.
doi_str_mv 10.1109/LPT.2023.3272514
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Now-a-days, the development of UV-C (200 nm to 270 nm) light sources and detectors is highly essential. Herein, we report the fabrication of UV-C photodetector using ultra-wide bandgap CuO nanostructures (NSs) with <inline-formula> <tex-math notation="LaTeX">\text{E}_{\mathbf {g}} </tex-math></inline-formula>=3.98 eV, on a flexible substrate. All solution-based technique was followed for the growth of CuO NSs on poly-ethylene terephthalate (PET) substrate. The as-fabricated device has shown photo-sensitivity of <inline-formula> <tex-math notation="LaTeX">\sim </tex-math></inline-formula>15, photo-responsivity of <inline-formula> <tex-math notation="LaTeX">\sim </tex-math></inline-formula>485 mA/W and photo-detectivity of <inline-formula> <tex-math notation="LaTeX">\sim \,\,1.4\times 10^{11} </tex-math></inline-formula> Jones with 220 nm excitation (at −20 V applied bias). 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subjects Detectors
direct bandgap CuO
Environmental monitoring
Excitation
Fabrication
Flexible components
Flexible electronics
Light sources
Line of sight communication
Nanostructures
Photoconducting materials
Photodetectors
Photometers
Photonic band gap
Polyethylene terephthalate
Quantum efficiency
solar-blind
solution-process
Substrates
title CuO-Based Solar-Blind Photodetector for Flexible Electronics
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