SOI Hall effect sensor operating up to 270/spl deg/C

SOI Hall effect sensor operating up to 270/spl deg/C

The design of a 5 Volts fully integrated magnetic sensor able to operate up to 270/spl deg/C is presented. Fabricated in a Partially Depleted (PD) 1 /spl mu/m SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabil...

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Hauptverfasser: Portmann, L., Ballan, H., Declercq, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aerospace industry
Automotive engineering
Circuits
Hall effect
Hall effect devices
Magnetic sensors
Silicon
Temperature sensors
Thin film transistors
Voltage
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creator Portmann, L.
Ballan, H.
Declercq, M.
description The design of a 5 Volts fully integrated magnetic sensor able to operate up to 270/spl deg/C is presented. Fabricated in a Partially Depleted (PD) 1 /spl mu/m SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.
doi_str_mv 10.1109/CICC.2002.1012811
format Conference Proceeding
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subjects Aerospace industry
Automotive engineering
Circuits
Hall effect
Hall effect devices
Magnetic sensors
Silicon
Temperature sensors
Thin film transistors
Voltage
title SOI Hall effect sensor operating up to 270/spl deg/C
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