Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

This paper proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrica...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2023-07, Vol.44 (7), p.1-1
Hauptverfasser:	Chung, Hao-Tung, Pan, Yu-Ming, Lin, Nein-Chih, Shih, Bo-Jheng, Yang, Chih-Chao, Shen, Chang-Hong, Huang, Po-Tsang, Cheng, Huang-Chung, Chen, Kuan-Neng, Hu, Chenming
Format:	Artikel
Sprache:	eng
Schlagworte:	CAD Computer aided design Crystal growth Epitaxial growth epitaxy Field effect transistors FinFETs Germanium Grain boundaries Integrated circuits laser crystallization Liquid phases low thermal budget Monolithic 3D Semiconductor devices Silicon Single crystals single-crystal Three-dimensional displays
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!