A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a P/sub out/ of 35.5 dBm and a PAE of about 50% for GSM900, a...

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Bibliographische Detailangaben
Hauptverfasser:	Yamamoto, K., Asada, T., Suzuki, S., Miura, T., Inoue, A., Miyakuni, S., Otsuji, J., Hattori, R., Miyazaki, Y., Shimura, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties Circuits Design. Technologies. Operation analysis. Testing Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology GSM Heterojunction bipolar transistors High power amplifiers Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MMICs Operational amplifiers Power amplifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor optical amplifiers Switches Transistors
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