A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process

The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe...

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Hauptverfasser: Sonmez, E., Trasser, A., Schad, K.-B., Abele, R., Schumacher, H.
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Trasser, A.
Schad, K.-B.
Abele, R.
Schumacher, H.
description The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at Ka band. The integrated components are a preamplifier, a mixer with an IF buffer and a local oscillator. The conversion gain is determined to be 16.3 dB for an intermediate frequency of 100 MHz.
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fullrecord <record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_ieee_primary_1011946</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1011946</ieee_id><sourcerecordid>15883428</sourcerecordid><originalsourceid>FETCH-LOGICAL-i135t-ee5c388eafb0e34ce5f4220084aff6aa834a7eac26839a7914224cbccc0cd7bf3</originalsourceid><addsrcrecordid>eNpFkEtLAzEUhYMPsNb-AHGTjcupeU6SZS32AQVB67rcSW80Mp0ZEluov96RCp7NXZyPczmHkFvOxpwz9_AyW07HgjEx5oxzp8ozMhDS6II5p8_JNTOWSSNUaS_IgGvhCqG5uSKjnD9ZL6UV42ZANhOaY_NeY-E_YkeFovPFN03oMR4w0ZDa5qvAZkv3vxgF6tvdDpOPUNdHCgeINVQ10tc4R7p4XNPQ7pttOtIutR5zviGXAeqMo787JG-zp_V0Uaye58vpZFVELnX_AbWX1iKEiqFUHnVQoq9nFYRQAlipwCB4UVrpwDjeu8pX3nvmt6YKckjuT7kdZA91SND4mDddijtIxw3Xto8QtufuTlxExH_7tKH8Af3LYxE</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Sonmez, E. ; Trasser, A. ; Schad, K.-B. ; Abele, R. ; Schumacher, H.</creator><creatorcontrib>Sonmez, E. ; Trasser, A. ; Schad, K.-B. ; Abele, R. ; Schumacher, H.</creatorcontrib><description>The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at Ka band. The integrated components are a preamplifier, a mixer with an IF buffer and a local oscillator. The conversion gain is determined to be 16.3 dB for an intermediate frequency of 100 MHz.</description><identifier>ISSN: 1529-2517</identifier><identifier>ISBN: 0780372468</identifier><identifier>ISBN: 9780780372467</identifier><identifier>EISSN: 2375-0995</identifier><identifier>DOI: 10.1109/RFIC.2002.1011946</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Circuit properties ; Circuit synthesis ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Integrated circuit layout ; Integrated circuit technology ; Integrated circuits ; Local oscillators ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Mixers ; MMICs ; Preamplifiers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; Silicon germanium ; Transistors</subject><ispartof>2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280), 2002, p.159-162</ispartof><rights>2004 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1011946$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1011946$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=15883428$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sonmez, E.</creatorcontrib><creatorcontrib>Trasser, A.</creatorcontrib><creatorcontrib>Schad, K.-B.</creatorcontrib><creatorcontrib>Abele, R.</creatorcontrib><creatorcontrib>Schumacher, H.</creatorcontrib><title>A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process</title><title>2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)</title><addtitle>RFIC</addtitle><description>The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at Ka band. The integrated components are a preamplifier, a mixer with an IF buffer and a local oscillator. The conversion gain is determined to be 16.3 dB for an intermediate frequency of 100 MHz.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Circuit synthesis</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Integrated circuit layout</subject><subject>Integrated circuit technology</subject><subject>Integrated circuits</subject><subject>Local oscillators</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Mixers</subject><subject>MMICs</subject><subject>Preamplifiers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>Silicon germanium</subject><subject>Transistors</subject><issn>1529-2517</issn><issn>2375-0995</issn><isbn>0780372468</isbn><isbn>9780780372467</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkEtLAzEUhYMPsNb-AHGTjcupeU6SZS32AQVB67rcSW80Mp0ZEluov96RCp7NXZyPczmHkFvOxpwz9_AyW07HgjEx5oxzp8ozMhDS6II5p8_JNTOWSSNUaS_IgGvhCqG5uSKjnD9ZL6UV42ZANhOaY_NeY-E_YkeFovPFN03oMR4w0ZDa5qvAZkv3vxgF6tvdDpOPUNdHCgeINVQ10tc4R7p4XNPQ7pttOtIutR5zviGXAeqMo787JG-zp_V0Uaye58vpZFVELnX_AbWX1iKEiqFUHnVQoq9nFYRQAlipwCB4UVrpwDjeu8pX3nvmt6YKckjuT7kdZA91SND4mDddijtIxw3Xto8QtufuTlxExH_7tKH8Af3LYxE</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Sonmez, E.</creator><creator>Trasser, A.</creator><creator>Schad, K.-B.</creator><creator>Abele, R.</creator><creator>Schumacher, H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process</title><author>Sonmez, E. ; Trasser, A. ; Schad, K.-B. ; Abele, R. ; Schumacher, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i135t-ee5c388eafb0e34ce5f4220084aff6aa834a7eac26839a7914224cbccc0cd7bf3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Circuit synthesis</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Integrated circuit layout</topic><topic>Integrated circuit technology</topic><topic>Integrated circuits</topic><topic>Local oscillators</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Mixers</topic><topic>MMICs</topic><topic>Preamplifiers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>Silicon germanium</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Sonmez, E.</creatorcontrib><creatorcontrib>Trasser, A.</creatorcontrib><creatorcontrib>Schad, K.-B.</creatorcontrib><creatorcontrib>Abele, R.</creatorcontrib><creatorcontrib>Schumacher, H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sonmez, E.</au><au>Trasser, A.</au><au>Schad, K.-B.</au><au>Abele, R.</au><au>Schumacher, H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process</atitle><btitle>2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)</btitle><stitle>RFIC</stitle><date>2002</date><risdate>2002</risdate><spage>159</spage><epage>162</epage><pages>159-162</pages><issn>1529-2517</issn><eissn>2375-0995</eissn><isbn>0780372468</isbn><isbn>9780780372467</isbn><abstract>The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at Ka band. The integrated components are a preamplifier, a mixer with an IF buffer and a local oscillator. The conversion gain is determined to be 16.3 dB for an intermediate frequency of 100 MHz.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/RFIC.2002.1011946</doi><tpages>4</tpages></addata></record>
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identifier ISSN: 1529-2517
ispartof 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280), 2002, p.159-162
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2375-0995
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recordid cdi_ieee_primary_1011946
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Applied sciences
Circuit properties
Circuit synthesis
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Germanium silicon alloys
Heterojunction bipolar transistors
Integrated circuit layout
Integrated circuit technology
Integrated circuits
Local oscillators
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Mixers
MMICs
Preamplifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
Silicon germanium
Transistors
title A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T01%3A26%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20single-chip%2024%20GHz%20receiver%20front-end%20using%20a%20commercially%20available%20SiGe%20HBT%20foundry%20process&rft.btitle=2002%20IEEE%20Radio%20Frequency%20Integrated%20Circuits%20(RFIC)%20Symposium.%20Digest%20of%20Papers%20(Cat.%20No.02CH37280)&rft.au=Sonmez,%20E.&rft.date=2002&rft.spage=159&rft.epage=162&rft.pages=159-162&rft.issn=1529-2517&rft.eissn=2375-0995&rft.isbn=0780372468&rft.isbn_list=9780780372467&rft_id=info:doi/10.1109/RFIC.2002.1011946&rft_dat=%3Cpascalfrancis_6IE%3E15883428%3C/pascalfrancis_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1011946&rfr_iscdi=true