Atomic layer deposition (ALD) technology for reliable RF MEMS

A nano-layer inorganic coating technology has been developed to protect RF MEMS from electrical shorting as well as long-term reliability failures due to charging or moisture. The combination of alumina dielectric and zinc-oxide conducting layers can be constructed one atomic layer at a time. At 177...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hoivik, N., Elam, J.W., George, S.M., Gupta, K.C., Bright, V.M., Lee, Y.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic layer deposition Chemicals Coatings Conductivity Dielectrics Moisture Protection Radiofrequency microelectromechanical systems Surface treatment Thickness control
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