Intercept point behavior of Ka-band GaAs high power amplifiers
Intermodulation distortion (IMD) and output intercept point (OIP) behavior due to output power saturation, thermal effects and bias conditions were Investigated for AlGaAsAs/InGaAs/GaAs pHEMT power amplifiers at Ka-Band frequencies. A power amplifier with a chip size of 3.3 mm/sup 2/ and a saturated...
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| creator | Merkle, T. Tessmann, A. Ramberger, S. |
| description | Intermodulation distortion (IMD) and output intercept point (OIP) behavior due to output power saturation, thermal effects and bias conditions were Investigated for AlGaAsAs/InGaAs/GaAs pHEMT power amplifiers at Ka-Band frequencies. A power amplifier with a chip size of 3.3 mm/sup 2/ and a saturated output power of more than 27 dBm from 37-41 GHz, and a 3 mm/sup 2/ high gain compact dual-gate power amplifier with an output power saturation of 27 dBm at 35 GHz were designed. Intermodulation distortion for these two power amplifiers was compared. In order to separate fundamental effects from measurement Induced phenomena, the principle accuracy of multi-tone measurement systems that are based on scalar spectrum analyzers was reviewed. |
| doi_str_mv | 10.1109/MWSYM.2002.1011653 |
| format | Conference Proceeding |
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A power amplifier with a chip size of 3.3 mm/sup 2/ and a saturated output power of more than 27 dBm from 37-41 GHz, and a 3 mm/sup 2/ high gain compact dual-gate power amplifier with an output power saturation of 27 dBm at 35 GHz were designed. Intermodulation distortion for these two power amplifiers was compared. 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In order to separate fundamental effects from measurement Induced phenomena, the principle accuracy of multi-tone measurement systems that are based on scalar spectrum analyzers was reviewed.</description><subject>Distortion measurement</subject><subject>Frequency</subject><subject>Gallium arsenide</subject><subject>High power amplifiers</subject><subject>Indium gallium arsenide</subject><subject>Intermodulation distortion</subject><subject>PHEMTs</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Spectral analysis</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780780372399</isbn><isbn>0780372395</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE1LAzEYhIMfYKn7B_SSk7et-U5zEUqxtdjiQUU9LdnsGxvZ7q7JVvHfu9AOA3OYhzkMQleUTCgl5nbz9vyxmTBC2IQSSpXkJ2jEpFa5ZlSdoszoKRnMNePGnKERocLkSsj3C5Sl9EUGCUkM4SN0t2p6iA66HndtaHpcwtb-hDbi1uNHm5e2qfDSzhLehs_twPxCxHbX1cEHiOkSnXtbJ8iOOUavi_uX-UO-flqu5rN1HhgRfa6YBm9d5afKcD6VlXGK28p5cMo5T0vjpfWlGBrBdCkqbZi0lEpHK8Mc52N0c9jtYvu9h9QXu5Ac1LVtoN2ngmlFNediAK8PYACAoothZ-NfcbyJ_wPZPVl0</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Merkle, T.</creator><creator>Tessmann, A.</creator><creator>Ramberger, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2002</creationdate><title>Intercept point behavior of Ka-band GaAs high power amplifiers</title><author>Merkle, T. ; Tessmann, A. ; Ramberger, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i204t-627efacdf8693385d9c63adcfec6ccf1b9f5afb485d427b4d7925a115c1d92c33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Distortion measurement</topic><topic>Frequency</topic><topic>Gallium arsenide</topic><topic>High power amplifiers</topic><topic>Indium gallium arsenide</topic><topic>Intermodulation distortion</topic><topic>PHEMTs</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Spectral analysis</topic><toplevel>online_resources</toplevel><creatorcontrib>Merkle, T.</creatorcontrib><creatorcontrib>Tessmann, A.</creatorcontrib><creatorcontrib>Ramberger, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Merkle, T.</au><au>Tessmann, A.</au><au>Ramberger, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Intercept point behavior of Ka-band GaAs high power amplifiers</atitle><btitle>2002 IEEE MTT-S International Microwave Symposium Digest (Cat. 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| identifier | ISSN: 0149-645X |
| ispartof | 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.1, p.453-456 vol.1 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_1011653 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Distortion measurement Frequency Gallium arsenide High power amplifiers Indium gallium arsenide Intermodulation distortion PHEMTs Power amplifiers Power generation Spectral analysis |
| title | Intercept point behavior of Ka-band GaAs high power amplifiers |
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