An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology

An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology

A zero-IF receiver for UMTS realized by using an advanced 0.35 /spl mu/m SiGe BiCMOS process with 75 GHz transit frequency is presented. The focal point is the analog baseband chain consisting of a low-noise buffer (LNB), a fully integrated channel selection filter, programmable gain amplifiers (PGA...

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Veröffentlicht in:2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) 2002, Vol.1, p.13-16 vol.1
Hauptverfasser: Schelmbauer, W., Pretl, H., Maurer, L., Adler, B., Weigel, R., Hagelauer, R., Fenk, J.
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Sprache:eng
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3G mobile communication
Baseband
BiCMOS integrated circuits
Electronics packaging
Filters
Frequency
Germanium silicon alloys
Low-noise amplifiers
Silicon germanium
Voltage
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container_title 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
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creator Schelmbauer, W.
Pretl, H.
Maurer, L.
Adler, B.
Weigel, R.
Hagelauer, R.
Fenk, J.
description A zero-IF receiver for UMTS realized by using an advanced 0.35 /spl mu/m SiGe BiCMOS process with 75 GHz transit frequency is presented. The focal point is the analog baseband chain consisting of a low-noise buffer (LNB), a fully integrated channel selection filter, programmable gain amplifiers (PGA) and circuits to reduce the effects of DC-offsets. The whole chain is able to provide a voltage gain from -14 dB up to 50 dB in 1 dB steps and 43 dB adjacent channel selectivity. The total receiver current consumption for a supply voltage of 2.7 V is less than 45 mA, whereby the baseband chain consumes 15 mA.
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subjects 3G mobile communication
Baseband
BiCMOS integrated circuits
Electronics packaging
Filters
Frequency
Germanium silicon alloys
Low-noise amplifiers
Silicon germanium
Voltage
title An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology
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