Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O } Plasma Treatment

Herein, we present a detailed analysis of the effects of O _{\text{2}} plasma treatment on the AlGaN barrier volume trap states in an Al _{\text{0.45}} Ga _{\text{0.55}} N/GaN high-electron mobility transistor. Compared to that of the as-grown sample, the single short-pulse \textit{I}_{\textit{D}}...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-05, p.1-6
Hauptverfasser:	Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Chakraborty, Surajit, Cho, Chu-Young, Kim, Jae-Moo, Lee, Sang-Tae, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Dae-Hyun, Kim, Tae-Woo
Format:	Artikel
Sprache:	eng
Schlagworte:	1/f low-frequency noise Aluminum gallium nitride current gain cutoff frequency (f<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\textit{T}}</tex-math> </inline-formula>) Electron traps GaN high electron mobility transistor (HEMT) HEMTs Logic gates O<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula> plasma treatment Plasmas short-pulse characterization Surface treatment transconductance (g<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\textit{m}}</tex-math> </inline-formula>) unilateral gain cutoff frequency (f<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{max}}</tex-math> </inline-formula>) Wide band gap semiconductors
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