Evaluation of a planar process APD with a LSO scintillator to measure depth of interaction

We have evaluated the performance of an APD/LSO combination for use in PET systems. We have used a recently developed APD detector in combination with a 3 /spl times/ 3 /spl times/ 30 mm/sup 3/ LSO scintillator to measure the depth of interaction from /sup 22/Na photons. The detectors were built usi...

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Hauptverfasser: Gramsch, E., Avila, R.E., Ferrer, J., Bui, P.
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Avila, R.E.
Ferrer, J.
Bui, P.
description We have evaluated the performance of an APD/LSO combination for use in PET systems. We have used a recently developed APD detector in combination with a 3 /spl times/ 3 /spl times/ 30 mm/sup 3/ LSO scintillator to measure the depth of interaction from /sup 22/Na photons. The detectors were built using standard planar technology for silicon devices. Photodiodes with 3 mm diameter active area have been produced by deep boron diffusion, followed by shallow boron and phosphor diffusion. Because the structure has not been optimized yet, we only obtained a gain of 6 at 1300 V. In spite of the low gain, we have obtained a resolution of 24 % with a single APD and the 3 /spl times/ 3 /spl times/ 30 mm/sup 3/ scintillator. The energy spectra acquired using two APDs connected to the small sides of the scintillator depends on the position of interaction and varies from 25 to 50 %. The measurements allow to obtain the depth of interaction inside the crystal with an uncertainty of about 2 mm.
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The measurements allow to obtain the depth of interaction inside the crystal with an uncertainty of about 2 mm.</description><subject>Boron</subject><subject>Detectors</subject><subject>Doping</subject><subject>Electric breakdown</subject><subject>Energy resolution</subject><subject>Neutrons</subject><subject>Phosphors</subject><subject>Photodiodes</subject><subject>Positron emission tomography</subject><subject>Silicon devices</subject><issn>1082-3654</issn><issn>2577-0829</issn><isbn>9780780373242</isbn><isbn>0780373243</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1Kw0AUhQd_wFj7BN3MCyTe-Usyy1KrFqIVohs35WYywZG0CTOp4ts7YuHC4Z5z-BaHkAWDjDHQt891_bRZZRyAZQxA57o8IwlXRZFCyfU5meuihHiiEFzyC5Kw6KciV_KKXIfwCcBBSJmQ9_UX9kec3HCgQ0eRjj0e0NPRD8aGQJcvd_TbTR8xqeotDcYdJtf3OA2eTgPdWwxHb2lrx9iJgBhbj-aPd0MuO-yDnZ90Rt7u16-rx7TaPmxWyyp1DNSU2s6UiKZpC8S86HRXSsO4klIgZw1vFEbtDFPx4bnOlQJrBEcrS92oVogZWfxznbV2N3q3R_-zO80ifgHQzlVc</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Gramsch, E.</creator><creator>Avila, R.E.</creator><creator>Ferrer, J.</creator><creator>Bui, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>Evaluation of a planar process APD with a LSO scintillator to measure depth of interaction</title><author>Gramsch, E. ; Avila, R.E. ; Ferrer, J. ; Bui, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-efc8aacbd7aa67f9f84c125443a21b2b5aa21fc151b22696550ec32ae489b5d33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Boron</topic><topic>Detectors</topic><topic>Doping</topic><topic>Electric breakdown</topic><topic>Energy resolution</topic><topic>Neutrons</topic><topic>Phosphors</topic><topic>Photodiodes</topic><topic>Positron emission tomography</topic><topic>Silicon devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Gramsch, E.</creatorcontrib><creatorcontrib>Avila, R.E.</creatorcontrib><creatorcontrib>Ferrer, J.</creatorcontrib><creatorcontrib>Bui, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gramsch, E.</au><au>Avila, R.E.</au><au>Ferrer, J.</au><au>Bui, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Evaluation of a planar process APD with a LSO scintillator to measure depth of interaction</atitle><btitle>2001 IEEE Nuclear Science Symposium Conference Record (Cat. 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In spite of the low gain, we have obtained a resolution of 24 % with a single APD and the 3 /spl times/ 3 /spl times/ 30 mm/sup 3/ scintillator. The energy spectra acquired using two APDs connected to the small sides of the scintillator depends on the position of interaction and varies from 25 to 50 %. The measurements allow to obtain the depth of interaction inside the crystal with an uncertainty of about 2 mm.</abstract><pub>IEEE</pub><doi>10.1109/NSSMIC.2001.1009698</doi></addata></record>
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subjects Boron
Detectors
Doping
Electric breakdown
Energy resolution
Neutrons
Phosphors
Photodiodes
Positron emission tomography
Silicon devices
title Evaluation of a planar process APD with a LSO scintillator to measure depth of interaction
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