Surge Current Interruption Capability of Discrete IGBT Devices in DC Hybrid Circuit Breakers
The power electronic interrupter (PEI) determines the current interruption rating of the dc hybrid circuit breaker (HCB). This paper deals with discrete insulated gate bipolar transistor (IGBT) based PEI modules. The influence of the voltage clamping circuit (VCC) on the surge current interruption c...
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| Veröffentlicht in: | IEEE journal of emerging and selected topics in power electronics 2023-06, Vol.11 (3), p.1-1 |
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| creator | Ravi, Lakshmi Liu, Jian Liu, Jingcun Zhang, Yuhao Buttay, Cyril Schmalz, Steven Burgos, Rolando Dong, Dong |
| description | The power electronic interrupter (PEI) determines the current interruption rating of the dc hybrid circuit breaker (HCB). This paper deals with discrete insulated gate bipolar transistor (IGBT) based PEI modules. The influence of the voltage clamping circuit (VCC) on the surge current interruption capability (SCC) of the discrete IGBT is unveiled for the first time. Two commonly used VCC configurations are considered: a purely MOV based voltage clamp and an MOV-RC combination clamp designated as type I and type II PEI modules respectively. Comprehensive measurements are used to analyze the device turn-off behavior under each PEI module type to determine their limitations as well as their failure modes. The type I PEI is limited by the turn-off thermal stresses arising from the hard switching dynamics. The type II PEI, on the contrary, has the potential to achieve lower turn-off energy among other benefits but exhibits a unique failure mode during the tail current stage. Therefore, static and mixed-mode Technology Computer-Aided Design (TCAD) device simulations are introduced to provide further insights into the internal processes that alter the type II turn-off and in turn explain the failure mechanism. Finally, the influence of the various circuit parameters on the turn-off process are evaluated and methods to enhance the SCC of the IGBT based PEI are presented. |
| doi_str_mv | 10.1109/JESTPE.2023.3264933 |
| format | Article |
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This paper deals with discrete insulated gate bipolar transistor (IGBT) based PEI modules. The influence of the voltage clamping circuit (VCC) on the surge current interruption capability (SCC) of the discrete IGBT is unveiled for the first time. Two commonly used VCC configurations are considered: a purely MOV based voltage clamp and an MOV-RC combination clamp designated as type I and type II PEI modules respectively. Comprehensive measurements are used to analyze the device turn-off behavior under each PEI module type to determine their limitations as well as their failure modes. The type I PEI is limited by the turn-off thermal stresses arising from the hard switching dynamics. The type II PEI, on the contrary, has the potential to achieve lower turn-off energy among other benefits but exhibits a unique failure mode during the tail current stage. Therefore, static and mixed-mode Technology Computer-Aided Design (TCAD) device simulations are introduced to provide further insights into the internal processes that alter the type II turn-off and in turn explain the failure mechanism. Finally, the influence of the various circuit parameters on the turn-off process are evaluated and methods to enhance the SCC of the IGBT based PEI are presented.</description><identifier>ISSN: 2168-6777</identifier><identifier>ISSN: 2168-6785</identifier><identifier>EISSN: 2168-6785</identifier><identifier>DOI: 10.1109/JESTPE.2023.3264933</identifier><identifier>CODEN: IJESN2</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>CAD ; Circuit breakers ; Circuit faults ; Circuits ; Clamping circuits ; Clamps ; Computer aided design ; Discrete IGBT ; Electric potential ; Electrical surges ; Electronics ; Engineering ; Engineering Sciences ; Failure mechanisms ; Failure modes ; Fault currents ; Hybrid circuits ; Insulated gate bipolar transistors ; Interrupters ; Interruption ; Modules ; power electronic interrupter ; Process parameters ; Semiconductor devices ; Snubbers ; surge current interruption capability ; Surges ; tail current ; Thermal stress ; Voltage ; voltage clamping circuit</subject><ispartof>IEEE journal of emerging and selected topics in power electronics, 2023-06, Vol.11 (3), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-57cf992081127f02f3591edbf901c39518834695cb237f21f3c190523538ed103</citedby><cites>FETCH-LOGICAL-c359t-57cf992081127f02f3591edbf901c39518834695cb237f21f3c190523538ed103</cites><orcidid>0000-0001-6350-4861 ; 0000-0001-7140-5804 ; 0000-0002-7236-3439 ; 0000-0001-6324-8757 ; 0000-0001-7700-7946 ; 0000-0002-6155-1450 ; 0000-0003-0570-2768 ; 0000000171405804 ; 0000000177007946 ; 0000000272363439 ; 0000000163504861 ; 0000000305702768 ; 0000000261551450 ; 0000000163248757</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10092766$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10092766$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-04065646$$DView record in HAL$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/2422297$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ravi, Lakshmi</creatorcontrib><creatorcontrib>Liu, Jian</creatorcontrib><creatorcontrib>Liu, Jingcun</creatorcontrib><creatorcontrib>Zhang, Yuhao</creatorcontrib><creatorcontrib>Buttay, Cyril</creatorcontrib><creatorcontrib>Schmalz, Steven</creatorcontrib><creatorcontrib>Burgos, Rolando</creatorcontrib><creatorcontrib>Dong, Dong</creatorcontrib><creatorcontrib>Eaton Corporation, Dublin (Ireland)</creatorcontrib><title>Surge Current Interruption Capability of Discrete IGBT Devices in DC Hybrid Circuit Breakers</title><title>IEEE journal of emerging and selected topics in power electronics</title><addtitle>JESTPE</addtitle><description>The power electronic interrupter (PEI) determines the current interruption rating of the dc hybrid circuit breaker (HCB). This paper deals with discrete insulated gate bipolar transistor (IGBT) based PEI modules. The influence of the voltage clamping circuit (VCC) on the surge current interruption capability (SCC) of the discrete IGBT is unveiled for the first time. Two commonly used VCC configurations are considered: a purely MOV based voltage clamp and an MOV-RC combination clamp designated as type I and type II PEI modules respectively. Comprehensive measurements are used to analyze the device turn-off behavior under each PEI module type to determine their limitations as well as their failure modes. The type I PEI is limited by the turn-off thermal stresses arising from the hard switching dynamics. The type II PEI, on the contrary, has the potential to achieve lower turn-off energy among other benefits but exhibits a unique failure mode during the tail current stage. Therefore, static and mixed-mode Technology Computer-Aided Design (TCAD) device simulations are introduced to provide further insights into the internal processes that alter the type II turn-off and in turn explain the failure mechanism. Finally, the influence of the various circuit parameters on the turn-off process are evaluated and methods to enhance the SCC of the IGBT based PEI are presented.</description><subject>CAD</subject><subject>Circuit breakers</subject><subject>Circuit faults</subject><subject>Circuits</subject><subject>Clamping circuits</subject><subject>Clamps</subject><subject>Computer aided design</subject><subject>Discrete IGBT</subject><subject>Electric potential</subject><subject>Electrical surges</subject><subject>Electronics</subject><subject>Engineering</subject><subject>Engineering Sciences</subject><subject>Failure mechanisms</subject><subject>Failure modes</subject><subject>Fault currents</subject><subject>Hybrid circuits</subject><subject>Insulated gate bipolar transistors</subject><subject>Interrupters</subject><subject>Interruption</subject><subject>Modules</subject><subject>power electronic interrupter</subject><subject>Process parameters</subject><subject>Semiconductor devices</subject><subject>Snubbers</subject><subject>surge current interruption capability</subject><subject>Surges</subject><subject>tail current</subject><subject>Thermal stress</subject><subject>Voltage</subject><subject>voltage clamping circuit</subject><issn>2168-6777</issn><issn>2168-6785</issn><issn>2168-6785</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkUFLAzEQhRdRUNRfoIegJw-tyWSTbI66rW2loGC9CWGbTjRad2uSFfrv3bIizmWGx_cGZl6WnTE6ZIzq6_vx0-JxPAQKfMhB5przvewImCwGUhVi_29W6jA7jfGddlWA0Ko4yl6e2vCKpGxDwDqRWZ0whHaTfFOTstpUS7_2aUsaR0Y-2oAJyWxyuyAj_PYWI_E1GZVkul0GvyKlD7b1idwGrD4wxJPswFXriKe__Th7vhsvyulg_jCZlTfzgeVCp4FQ1mkNtGAMlKPgOpXhauk0ZZZrwYqC51ILuwSuHDDHLdNUABe8wBWj_Di76Pc2MXkTrU9o32xT12iTgRwAtOqgqx56q9ZmE_xnFbamqbyZ3szNTqM5lULm8pt17GXPbkLz1WJM5r1pQ93dYKD7nKSMq7yjeE_Z0MQY0P2tZdTsojF9NGYXjfmNpnOd9y6PiP8cVIOSkv8A0H-Gvw</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Ravi, Lakshmi</creator><creator>Liu, Jian</creator><creator>Liu, Jingcun</creator><creator>Zhang, Yuhao</creator><creator>Buttay, Cyril</creator><creator>Schmalz, Steven</creator><creator>Burgos, Rolando</creator><creator>Dong, Dong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-6350-4861</orcidid><orcidid>https://orcid.org/0000-0001-7140-5804</orcidid><orcidid>https://orcid.org/0000-0002-7236-3439</orcidid><orcidid>https://orcid.org/0000-0001-6324-8757</orcidid><orcidid>https://orcid.org/0000-0001-7700-7946</orcidid><orcidid>https://orcid.org/0000-0002-6155-1450</orcidid><orcidid>https://orcid.org/0000-0003-0570-2768</orcidid><orcidid>https://orcid.org/0000000171405804</orcidid><orcidid>https://orcid.org/0000000177007946</orcidid><orcidid>https://orcid.org/0000000272363439</orcidid><orcidid>https://orcid.org/0000000163504861</orcidid><orcidid>https://orcid.org/0000000305702768</orcidid><orcidid>https://orcid.org/0000000261551450</orcidid><orcidid>https://orcid.org/0000000163248757</orcidid></search><sort><creationdate>20230601</creationdate><title>Surge Current Interruption Capability of Discrete IGBT Devices in DC Hybrid Circuit Breakers</title><author>Ravi, Lakshmi ; Liu, Jian ; Liu, Jingcun ; Zhang, Yuhao ; Buttay, Cyril ; Schmalz, Steven ; Burgos, Rolando ; Dong, Dong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-57cf992081127f02f3591edbf901c39518834695cb237f21f3c190523538ed103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>CAD</topic><topic>Circuit breakers</topic><topic>Circuit faults</topic><topic>Circuits</topic><topic>Clamping circuits</topic><topic>Clamps</topic><topic>Computer aided design</topic><topic>Discrete IGBT</topic><topic>Electric potential</topic><topic>Electrical surges</topic><topic>Electronics</topic><topic>Engineering</topic><topic>Engineering Sciences</topic><topic>Failure mechanisms</topic><topic>Failure modes</topic><topic>Fault currents</topic><topic>Hybrid circuits</topic><topic>Insulated gate bipolar transistors</topic><topic>Interrupters</topic><topic>Interruption</topic><topic>Modules</topic><topic>power electronic interrupter</topic><topic>Process parameters</topic><topic>Semiconductor devices</topic><topic>Snubbers</topic><topic>surge current interruption capability</topic><topic>Surges</topic><topic>tail current</topic><topic>Thermal stress</topic><topic>Voltage</topic><topic>voltage clamping circuit</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ravi, Lakshmi</creatorcontrib><creatorcontrib>Liu, Jian</creatorcontrib><creatorcontrib>Liu, Jingcun</creatorcontrib><creatorcontrib>Zhang, Yuhao</creatorcontrib><creatorcontrib>Buttay, Cyril</creatorcontrib><creatorcontrib>Schmalz, Steven</creatorcontrib><creatorcontrib>Burgos, Rolando</creatorcontrib><creatorcontrib>Dong, Dong</creatorcontrib><creatorcontrib>Eaton Corporation, Dublin (Ireland)</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>OSTI.GOV</collection><jtitle>IEEE journal of emerging and selected topics in power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ravi, Lakshmi</au><au>Liu, Jian</au><au>Liu, Jingcun</au><au>Zhang, Yuhao</au><au>Buttay, Cyril</au><au>Schmalz, Steven</au><au>Burgos, Rolando</au><au>Dong, Dong</au><aucorp>Eaton Corporation, Dublin (Ireland)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surge Current Interruption Capability of Discrete IGBT Devices in DC Hybrid Circuit Breakers</atitle><jtitle>IEEE journal of emerging and selected topics in power electronics</jtitle><stitle>JESTPE</stitle><date>2023-06-01</date><risdate>2023</risdate><volume>11</volume><issue>3</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>2168-6777</issn><issn>2168-6785</issn><eissn>2168-6785</eissn><coden>IJESN2</coden><abstract>The power electronic interrupter (PEI) determines the current interruption rating of the dc hybrid circuit breaker (HCB). This paper deals with discrete insulated gate bipolar transistor (IGBT) based PEI modules. The influence of the voltage clamping circuit (VCC) on the surge current interruption capability (SCC) of the discrete IGBT is unveiled for the first time. Two commonly used VCC configurations are considered: a purely MOV based voltage clamp and an MOV-RC combination clamp designated as type I and type II PEI modules respectively. Comprehensive measurements are used to analyze the device turn-off behavior under each PEI module type to determine their limitations as well as their failure modes. The type I PEI is limited by the turn-off thermal stresses arising from the hard switching dynamics. The type II PEI, on the contrary, has the potential to achieve lower turn-off energy among other benefits but exhibits a unique failure mode during the tail current stage. Therefore, static and mixed-mode Technology Computer-Aided Design (TCAD) device simulations are introduced to provide further insights into the internal processes that alter the type II turn-off and in turn explain the failure mechanism. Finally, the influence of the various circuit parameters on the turn-off process are evaluated and methods to enhance the SCC of the IGBT based PEI are presented.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/JESTPE.2023.3264933</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0001-6350-4861</orcidid><orcidid>https://orcid.org/0000-0001-7140-5804</orcidid><orcidid>https://orcid.org/0000-0002-7236-3439</orcidid><orcidid>https://orcid.org/0000-0001-6324-8757</orcidid><orcidid>https://orcid.org/0000-0001-7700-7946</orcidid><orcidid>https://orcid.org/0000-0002-6155-1450</orcidid><orcidid>https://orcid.org/0000-0003-0570-2768</orcidid><orcidid>https://orcid.org/0000000171405804</orcidid><orcidid>https://orcid.org/0000000177007946</orcidid><orcidid>https://orcid.org/0000000272363439</orcidid><orcidid>https://orcid.org/0000000163504861</orcidid><orcidid>https://orcid.org/0000000305702768</orcidid><orcidid>https://orcid.org/0000000261551450</orcidid><orcidid>https://orcid.org/0000000163248757</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | CAD Circuit breakers Circuit faults Circuits Clamping circuits Clamps Computer aided design Discrete IGBT Electric potential Electrical surges Electronics Engineering Engineering Sciences Failure mechanisms Failure modes Fault currents Hybrid circuits Insulated gate bipolar transistors Interrupters Interruption Modules power electronic interrupter Process parameters Semiconductor devices Snubbers surge current interruption capability Surges tail current Thermal stress Voltage voltage clamping circuit |
| title | Surge Current Interruption Capability of Discrete IGBT Devices in DC Hybrid Circuit Breakers |
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