Ultralow- \textit Amorphous Boron Nitride Film for Copper Interconnect Capping Layer

We report the feasibility of ultralow- \textit{k} amorphous boron nitride ( \alpha -BN) film as a new capping layer for copper (Cu) interconnects. \alpha -BN thin films were successfully deposited using a plasma-enhanced chemical vapor deposition (PECVD) process. The CVD-grown \alpha -BN showe...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-03, p.1-6
Hauptverfasser:	Kim, Kiryong, Kim, Hyeongjoon, Lee, Sun-Woo, Lee, Min Yung, Lee, Gyusoup, Park, Youngkeun, Kim, Heetae, Lee, Yun Hee, Kim, Minsu, Ma, Kyung Yeol, Kim, Min Ju, Kim, Taek-Soo, Shin, Hyeon Suk, Cho, Byung Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Adhesives Amorphous boron nitride (<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> alpha </tex-math> </inline-formula>-BN) Annealing back-end-of-line (BEOL) capping layer copper interconnect Delays Electric breakdown Energy measurement Leakage currents low-<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> textit{k}</tex-math> </inline-formula> RC delay Silicon
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