A 2.22 Mb/s True Random Number Generator Based on a GeTex Ovonic Threshold Switching Memristor
True random number generators (TRNGs) based on threshold switching memristors emerge as a building block for secure electronics. However, the throughputs reported in previous studies have a stark gap with the requirements of practical applications (>1 Mb/s). Here, we implement a high-speed TRNG w...
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| Veröffentlicht in: | IEEE electron device letters 2023-05, Vol.44 (5), p.1-1 |
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| container_title | IEEE electron device letters |
| container_volume | 44 |
| creator | Fu, Yuyang Wen, Jinyu Wang, Lun Yang, Ling Zhu, Qihang Zuo, Wenbin Zhang, Puyi Li, Yi Tong, Hao Ma, Guokun Wang, Hao Miao, Xiangshui |
| description | True random number generators (TRNGs) based on threshold switching memristors emerge as a building block for secure electronics. However, the throughputs reported in previous studies have a stark gap with the requirements of practical applications (>1 Mb/s). Here, we implement a high-speed TRNG with a GeTe x ovonic threshold switching (OTS) memristor. The TRNG throughput reaches 2.22 Mb/s for a single cell, which is 2.2 times faster than the prior state-of-the-art threshold-switching-based TRNG. In addition, the TRNG endurance of 2×10 9 bits was achieved, and the random bits passed 12 tests in the National Institute of Standards and Technology statistical test suite. Our results demonstrated that the OTS-based TRNG could provide a high-throughput and highly secure solution for edge applications. |
| doi_str_mv | 10.1109/LED.2023.3259000 |
| format | Article |
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However, the throughputs reported in previous studies have a stark gap with the requirements of practical applications (>1 Mb/s). Here, we implement a high-speed TRNG with a GeTe x ovonic threshold switching (OTS) memristor. The TRNG throughput reaches 2.22 Mb/s for a single cell, which is 2.2 times faster than the prior state-of-the-art threshold-switching-based TRNG. In addition, the TRNG endurance of 2×10 9 bits was achieved, and the random bits passed 12 tests in the National Institute of Standards and Technology statistical test suite. Our results demonstrated that the OTS-based TRNG could provide a high-throughput and highly secure solution for edge applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2023.3259000</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Gaussian distribution ; Generators ; high throughput ; memristor ; Memristors ; Oscillators ; ovonic threshold switching ; Random numbers ; Statistical tests ; Switches ; Switching ; Threshold voltage ; Throughput ; True random number generators</subject><ispartof>IEEE electron device letters, 2023-05, Vol.44 (5), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-1930-8550 ; 0000-0002-2972-4729 ; 0000-0002-1181-7345 ; 0000-0002-5727-688X ; 0000-0002-5621-5495 ; 0000-0002-4894-7653 ; 0000-0002-2372-2888 ; 0000-0002-8379-543X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10076428$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10076428$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fu, Yuyang</creatorcontrib><creatorcontrib>Wen, Jinyu</creatorcontrib><creatorcontrib>Wang, Lun</creatorcontrib><creatorcontrib>Yang, Ling</creatorcontrib><creatorcontrib>Zhu, Qihang</creatorcontrib><creatorcontrib>Zuo, Wenbin</creatorcontrib><creatorcontrib>Zhang, Puyi</creatorcontrib><creatorcontrib>Li, Yi</creatorcontrib><creatorcontrib>Tong, Hao</creatorcontrib><creatorcontrib>Ma, Guokun</creatorcontrib><creatorcontrib>Wang, Hao</creatorcontrib><creatorcontrib>Miao, Xiangshui</creatorcontrib><title>A 2.22 Mb/s True Random Number Generator Based on a GeTex Ovonic Threshold Switching Memristor</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>True random number generators (TRNGs) based on threshold switching memristors emerge as a building block for secure electronics. However, the throughputs reported in previous studies have a stark gap with the requirements of practical applications (>1 Mb/s). Here, we implement a high-speed TRNG with a GeTe x ovonic threshold switching (OTS) memristor. The TRNG throughput reaches 2.22 Mb/s for a single cell, which is 2.2 times faster than the prior state-of-the-art threshold-switching-based TRNG. In addition, the TRNG endurance of 2×10 9 bits was achieved, and the random bits passed 12 tests in the National Institute of Standards and Technology statistical test suite. Our results demonstrated that the OTS-based TRNG could provide a high-throughput and highly secure solution for edge applications.</description><subject>Gaussian distribution</subject><subject>Generators</subject><subject>high throughput</subject><subject>memristor</subject><subject>Memristors</subject><subject>Oscillators</subject><subject>ovonic threshold switching</subject><subject>Random numbers</subject><subject>Statistical tests</subject><subject>Switches</subject><subject>Switching</subject><subject>Threshold voltage</subject><subject>Throughput</subject><subject>True random number generators</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjT1PwzAURS0EEqWwMzBYYk7qZztOMpZSClJLJQgrkR2_0lRNXOyEj39PpDJd6eqcewm5BhYDsHyynN_HnHERC57kjLETMoIkySKWKHFKRiyVEAlg6pxchLBjDKRM5Yi8TymPOacrMwm08D3SF91a19DnvjHo6QJb9Lpznt7pgJa6luqhLPCHrr9cW1e02HoMW7e39PW77qpt3X7QFTa-DoN1Sc42eh_w6j_H5O1hXsweo-V68TSbLqMahOwizPKUm0pZFMqCYlyCEUJvKpuZhPNM5xWkXKfSarkxpsJcYWUNGgBp7YCOye1x9-DdZ4-hK3eu9-1wWfKMKQ6pgGygbo5UjYjlwdeN9r8lMJYqyTPxB_YrXgY</recordid><startdate>20230501</startdate><enddate>20230501</enddate><creator>Fu, Yuyang</creator><creator>Wen, Jinyu</creator><creator>Wang, Lun</creator><creator>Yang, Ling</creator><creator>Zhu, Qihang</creator><creator>Zuo, Wenbin</creator><creator>Zhang, Puyi</creator><creator>Li, Yi</creator><creator>Tong, Hao</creator><creator>Ma, Guokun</creator><creator>Wang, Hao</creator><creator>Miao, Xiangshui</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Gaussian distribution Generators high throughput memristor Memristors Oscillators ovonic threshold switching Random numbers Statistical tests Switches Switching Threshold voltage Throughput True random number generators |
| title | A 2.22 Mb/s True Random Number Generator Based on a GeTex Ovonic Threshold Switching Memristor |
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