GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

Utilizing hydrogen plasma treatment and controlled diffusion, a junction termination extension (JTE) structure for vertical gallium nitride (GaN) p-n diode with gradient hole density (GHD) is spontaneously formed based on the selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm ^{\text{2}} was boosted from 631 to 1100 V. In addition, the fabricated diode possessed a superior rectifying behavior with an ON/OFF-current ratio of 10 ^{\text{12}} , a specific differential ON-resistance of 0.75 m \sf\Omega \cdot cm ^{\text{2}} .