Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack

Threshold voltage ( {\textit{V}_\textit{t}} ) engineering is critical and challenging in the advanced logic devices. Inducing interface dipoles by the incorporation of dopants into the gate dielectrics is an emerging scheme to modulate the threshold voltage. However, the impact of those dipoles on g...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-04, Vol.70 (4), p.1-6
Hauptverfasser:	Xu, Zhongshan, Zhao, Guo-Dong, Ding, Rongzheng, Zhao, Yage, Xie, Qing, Lv, Yudong, Chen, Mingyan, Zhu, Xiaona, Yu, Shaofeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Current leakage Dielectric constant Dielectric properties Dipoles Dopants Electric potential First principles gate-stack Hafnium oxide Lanthanum Leakage current Logic gates Mathematical analysis Optical polarization Permittivity Slabs Threshold voltage transmission coefficients Tunneling tunneling current
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