Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes

In this article, a novel high robust and latch-up immune electrostatic discharge (ESD) protection device, called gate-controlled low-voltage-triggered silicon-controlled rectifier (GC-LVTSCR), is proposed for 5-V I/O protection applications in the advance 40-nm CMOS technology. By incorporating a su...

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