Double Buried Oxide Trap-Rich Substrates for High Frequency Applications

Measurements of a new type of substrate for the integration of the trap-rich interface passivation solution with the below-buried oxide functionalities required in fully-depleted (FD) Silicon-on-Insulator (SOI) nodes is presented. This is achieved by adding a second thin buried oxide (BOX2) layer in...

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Veröffentlicht in:	IEEE electron device letters 2023-04, Vol.44 (4), p.1-1
Hauptverfasser:	Nabet, Massinissa, Rack, Martin, Yan, Yiyi, Nguyen, Bich-Yen, Raskin, Jean-Pierre
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductivity Coplanar waveguides Double-BOX (DB) SOI effective resistivity (ρ<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">eff ) Harmonic Distortion (HD) oxide charges Passivation RF CMOS Semiconductor device measurement Silicon Silicon-on-insulator SOI (semiconductors) Substrates Transmission lines Trap-Rich substrate (TR)
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