Switching Transition Modeling of eGaN HEMT in Power Converters

Selection of power switch driver resistance is crucial for power converter design, and an improper resistance value can lead to reduced efficiency and undesired operational behavior such as over-voltage and false turn-on. To select appropriate resistance, this letter proposes an accurate switching t...

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Veröffentlicht in:	IEEE transactions on power electronics 2023-04, Vol.38 (4), p.1-5
Hauptverfasser:	Zhang, Guidong, He, Yuanhang, Yu, Samson Shenglong, Zhang, Yun, Tse, Chi K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accurate switching modeling Analytical models EGaN HEMT Experimentation Gallium nitrides HEMTs high -order DC-DC converter High electron mobility transistors Integrated circuit modeling Linear systems Mathematical models Modelling Parameter sensitivity Power converters Semiconductor device modeling Semiconductor devices Switches Switching Voltage
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