Gate drive for high speed, high power IGBTs
A new gate drive for high-voltage, high-power IGBT has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800 A/3300 V to switch up to 3000 A at 2200 V in 3 /spl mu...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1042 vol.2 |
|---|---|
| container_issue | |
| container_start_page | 1039 |
| container_title | |
| container_volume | 2 |
| creator | Nguyen, M.N. Cassel, R.L. deLamare, J.E. Pappas, G.C. |
| description | A new gate drive for high-voltage, high-power IGBT has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800 A/3300 V to switch up to 3000 A at 2200 V in 3 /spl mu/s with a rate of current rise of more than 10000 A//spl mu/s, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current are presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak currents and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt. |
| doi_str_mv | 10.1109/PPPS.2001.1001721 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1001721</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1001721</ieee_id><sourcerecordid>1001721</sourcerecordid><originalsourceid>FETCH-LOGICAL-i218t-8f9d4861ab38678e88537d7d24c4573266591c5f87dc1940d61cb6e54337f21c3</originalsourceid><addsrcrecordid>eNotj01LAzEURQMiqLU_QNxkrzPm5eslSy12LBQcsK7LNHmxEaVDUhT_vYX2Lu65qwOXsRsQLYDwD33fv7VSCGjhUCjhjF0JdEIhSOEu2LTWT3GINlp7vGR33bAnHkv-IZ52hW_zx5bXkSjeH_e4-6XCF93Tql6z8zR8VZqeOGHv8-fV7KVZvnaL2eOyyRLcvnHJR-0sDBvlLDpyziiMGKUO2qCS1hoPwSSHMYDXIloIG0tGK4VJQlATdnv0ZiJajyV_D-Vvffqj_gEzwT1z</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Gate drive for high speed, high power IGBTs</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Nguyen, M.N. ; Cassel, R.L. ; deLamare, J.E. ; Pappas, G.C.</creator><creatorcontrib>Nguyen, M.N. ; Cassel, R.L. ; deLamare, J.E. ; Pappas, G.C.</creatorcontrib><description>A new gate drive for high-voltage, high-power IGBT has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800 A/3300 V to switch up to 3000 A at 2200 V in 3 /spl mu/s with a rate of current rise of more than 10000 A//spl mu/s, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current are presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak currents and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.</description><identifier>ISBN: 0780371208</identifier><identifier>ISBN: 9780780371200</identifier><identifier>DOI: 10.1109/PPPS.2001.1001721</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boosting ; Driver circuits ; Insulated gate bipolar transistors ; Protection ; Pulse modulation ; Pulse transformers ; Solid state circuits ; Switches ; Switching circuits ; Voltage</subject><ispartof>PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251), 2001, Vol.2, p.1039-1042 vol.2</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1001721$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1001721$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nguyen, M.N.</creatorcontrib><creatorcontrib>Cassel, R.L.</creatorcontrib><creatorcontrib>deLamare, J.E.</creatorcontrib><creatorcontrib>Pappas, G.C.</creatorcontrib><title>Gate drive for high speed, high power IGBTs</title><title>PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251)</title><addtitle>PPPS</addtitle><description>A new gate drive for high-voltage, high-power IGBT has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800 A/3300 V to switch up to 3000 A at 2200 V in 3 /spl mu/s with a rate of current rise of more than 10000 A//spl mu/s, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current are presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak currents and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.</description><subject>Boosting</subject><subject>Driver circuits</subject><subject>Insulated gate bipolar transistors</subject><subject>Protection</subject><subject>Pulse modulation</subject><subject>Pulse transformers</subject><subject>Solid state circuits</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Voltage</subject><isbn>0780371208</isbn><isbn>9780780371200</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj01LAzEURQMiqLU_QNxkrzPm5eslSy12LBQcsK7LNHmxEaVDUhT_vYX2Lu65qwOXsRsQLYDwD33fv7VSCGjhUCjhjF0JdEIhSOEu2LTWT3GINlp7vGR33bAnHkv-IZ52hW_zx5bXkSjeH_e4-6XCF93Tql6z8zR8VZqeOGHv8-fV7KVZvnaL2eOyyRLcvnHJR-0sDBvlLDpyziiMGKUO2qCS1hoPwSSHMYDXIloIG0tGK4VJQlATdnv0ZiJajyV_D-Vvffqj_gEzwT1z</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Nguyen, M.N.</creator><creator>Cassel, R.L.</creator><creator>deLamare, J.E.</creator><creator>Pappas, G.C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>Gate drive for high speed, high power IGBTs</title><author>Nguyen, M.N. ; Cassel, R.L. ; deLamare, J.E. ; Pappas, G.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i218t-8f9d4861ab38678e88537d7d24c4573266591c5f87dc1940d61cb6e54337f21c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Boosting</topic><topic>Driver circuits</topic><topic>Insulated gate bipolar transistors</topic><topic>Protection</topic><topic>Pulse modulation</topic><topic>Pulse transformers</topic><topic>Solid state circuits</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Nguyen, M.N.</creatorcontrib><creatorcontrib>Cassel, R.L.</creatorcontrib><creatorcontrib>deLamare, J.E.</creatorcontrib><creatorcontrib>Pappas, G.C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nguyen, M.N.</au><au>Cassel, R.L.</au><au>deLamare, J.E.</au><au>Pappas, G.C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Gate drive for high speed, high power IGBTs</atitle><btitle>PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251)</btitle><stitle>PPPS</stitle><date>2001</date><risdate>2001</risdate><volume>2</volume><spage>1039</spage><epage>1042 vol.2</epage><pages>1039-1042 vol.2</pages><isbn>0780371208</isbn><isbn>9780780371200</isbn><abstract>A new gate drive for high-voltage, high-power IGBT has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800 A/3300 V to switch up to 3000 A at 2200 V in 3 /spl mu/s with a rate of current rise of more than 10000 A//spl mu/s, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current are presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak currents and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.</abstract><pub>IEEE</pub><doi>10.1109/PPPS.2001.1001721</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780371208 |
| ispartof | PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251), 2001, Vol.2, p.1039-1042 vol.2 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_1001721 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boosting Driver circuits Insulated gate bipolar transistors Protection Pulse modulation Pulse transformers Solid state circuits Switches Switching circuits Voltage |
| title | Gate drive for high speed, high power IGBTs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T15%3A51%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Gate%20drive%20for%20high%20speed,%20high%20power%20IGBTs&rft.btitle=PPPS-2001%20Pulsed%20Power%20Plasma%20Science%202001.%2028th%20IEEE%20International%20Conference%20on%20Plasma%20Science%20and%2013th%20IEEE%20International%20Pulsed%20Power%20Conference.%20Digest%20of%20Papers%20(Cat.%20No.01CH37251)&rft.au=Nguyen,%20M.N.&rft.date=2001&rft.volume=2&rft.spage=1039&rft.epage=1042%20vol.2&rft.pages=1039-1042%20vol.2&rft.isbn=0780371208&rft.isbn_list=9780780371200&rft_id=info:doi/10.1109/PPPS.2001.1001721&rft_dat=%3Cieee_6IE%3E1001721%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1001721&rfr_iscdi=true |