24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer
This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band. A high-drain current operation of 1.4 A/mm was realized by employing high-density 2-dimensional electron gas channel and reg...
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Veröffentlicht in: | IEEE journal of the Electron Devices Society 2023-01, Vol.11, p.1-1 |
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creator | Kotani, Junji Yaita, Junya Homma, Kenji Ozaki, Shirou Yamada, Atsushi Sato, Masaru Ohki, Toshihiro Nakamura, Norikazu |
description | This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band. A high-drain current operation of 1.4 A/mm was realized by employing high-density 2-dimensional electron gas channel and regrown Ohmic contacts. Furthermore, a high-voltage operation of 110 V was achieved owing to the high-density and high-breakdown SiNx layer grown by low-pressure/high-temperature chemical vapor deposition. Three-stage AlGaN buffer layers improved the electron mobility of 2-dimensional electron gas and allowed us to grow a GaN channel with a low carbon concentration. Furthermore, a regrown n-GaN contact layer was employed to minimize source/drain contact resistances. A high drain current of 1470 mA/mm and high breakdown voltage of 258 V were achieved. Our results demonstrate the potential of GaN HEMTs on the AlN substrate as next-generation high-power radio frequency devices. |
doi_str_mv | 10.1109/JEDS.2023.3234235 |
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A high-drain current operation of 1.4 A/mm was realized by employing high-density 2-dimensional electron gas channel and regrown Ohmic contacts. Furthermore, a high-voltage operation of 110 V was achieved owing to the high-density and high-breakdown SiNx layer grown by low-pressure/high-temperature chemical vapor deposition. Three-stage AlGaN buffer layers improved the electron mobility of 2-dimensional electron gas and allowed us to grow a GaN channel with a low carbon concentration. Furthermore, a regrown n-GaN contact layer was employed to minimize source/drain contact resistances. A high drain current of 1470 mA/mm and high breakdown voltage of 258 V were achieved. 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A high-drain current operation of 1.4 A/mm was realized by employing high-density 2-dimensional electron gas channel and regrown Ohmic contacts. Furthermore, a high-voltage operation of 110 V was achieved owing to the high-density and high-breakdown SiNx layer grown by low-pressure/high-temperature chemical vapor deposition. Three-stage AlGaN buffer layers improved the electron mobility of 2-dimensional electron gas and allowed us to grow a GaN channel with a low carbon concentration. Furthermore, a regrown n-GaN contact layer was employed to minimize source/drain contact resistances. A high drain current of 1470 mA/mm and high breakdown voltage of 258 V were achieved. Our results demonstrate the potential of GaN HEMTs on the AlN substrate as next-generation high-power radio frequency devices.</description><subject>AlN</subject><subject>Aluminum gallium nitride</subject><subject>Aluminum nitride</subject><subject>Electric breakdown</subject><subject>GaN</subject><subject>HEMTs</subject><subject>high breakdown</subject><subject>high-electron-mobility transistor (HEMT)</subject><subject>III-V semiconductor materials</subject><subject>MODFETs</subject><subject>SiN</subject><subject>Wide band gap semiconductors</subject><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNo9js1OwkAcxDcmJhLkAUw87Au07HfbIwEEDKIJ-HFr_tvdpYuFmm0N8vZWMc5lMnP4zSB0Q0lMKcmG99PJOmaE8ZgzLhiXF6jHqEojlXBxhQZNsyOdUqoypXoImIgFfh3u9_gNazgYPIMVnk8fNg2uD3hUrXDzqZs2QGsbfPRtidvS4uXT-GWCt6E-HnDptyXWwcK7-YnO28rgtV994QpONlyjSwdVYwd_3kfPd9PNeB4tH2eL8WgZGZqwNmJJxoiTUrsCCNMSjGMqMwlIywoAayQlJEkYA5NS3n3XnDpBtC2AWlUY3keLM9fUsMs_gt9DOOU1-Py3qMM2h9D6orK5TDJDHGeSFFpQQcFxRYRLiZHdjiEd6_bM8tbaf1Z3gDIiKP8GEKRpQA</recordid><startdate>20230101</startdate><enddate>20230101</enddate><creator>Kotani, Junji</creator><creator>Yaita, Junya</creator><creator>Homma, Kenji</creator><creator>Ozaki, Shirou</creator><creator>Yamada, Atsushi</creator><creator>Sato, Masaru</creator><creator>Ohki, Toshihiro</creator><creator>Nakamura, Norikazu</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-7977-0539</orcidid><orcidid>https://orcid.org/0000-0002-3627-7111</orcidid><orcidid>https://orcid.org/0000-0003-3827-8625</orcidid><orcidid>https://orcid.org/0000-0003-1775-2308</orcidid></search><sort><creationdate>20230101</creationdate><title>24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer</title><author>Kotani, Junji ; Yaita, Junya ; Homma, Kenji ; Ozaki, Shirou ; Yamada, Atsushi ; Sato, Masaru ; Ohki, Toshihiro ; Nakamura, Norikazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-d172t-27920f55bfca02b5adf269d7a5e2caaed51007722ad813966b31f40beca1e6cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>AlN</topic><topic>Aluminum gallium nitride</topic><topic>Aluminum nitride</topic><topic>Electric breakdown</topic><topic>GaN</topic><topic>HEMTs</topic><topic>high breakdown</topic><topic>high-electron-mobility transistor (HEMT)</topic><topic>III-V semiconductor materials</topic><topic>MODFETs</topic><topic>SiN</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kotani, Junji</creatorcontrib><creatorcontrib>Yaita, Junya</creatorcontrib><creatorcontrib>Homma, Kenji</creatorcontrib><creatorcontrib>Ozaki, Shirou</creatorcontrib><creatorcontrib>Yamada, Atsushi</creatorcontrib><creatorcontrib>Sato, Masaru</creatorcontrib><creatorcontrib>Ohki, Toshihiro</creatorcontrib><creatorcontrib>Nakamura, Norikazu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Xplore Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE journal of the Electron Devices Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kotani, Junji</au><au>Yaita, Junya</au><au>Homma, Kenji</au><au>Ozaki, Shirou</au><au>Yamada, Atsushi</au><au>Sato, Masaru</au><au>Ohki, Toshihiro</au><au>Nakamura, Norikazu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer</atitle><jtitle>IEEE journal of the Electron Devices Society</jtitle><stitle>JEDS</stitle><date>2023-01-01</date><risdate>2023</risdate><volume>11</volume><spage>1</spage><epage>1</epage><pages>1-1</pages><eissn>2168-6734</eissn><coden>IJEDAC</coden><abstract>This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band. A high-drain current operation of 1.4 A/mm was realized by employing high-density 2-dimensional electron gas channel and regrown Ohmic contacts. Furthermore, a high-voltage operation of 110 V was achieved owing to the high-density and high-breakdown SiNx layer grown by low-pressure/high-temperature chemical vapor deposition. Three-stage AlGaN buffer layers improved the electron mobility of 2-dimensional electron gas and allowed us to grow a GaN channel with a low carbon concentration. Furthermore, a regrown n-GaN contact layer was employed to minimize source/drain contact resistances. A high drain current of 1470 mA/mm and high breakdown voltage of 258 V were achieved. 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subjects | AlN Aluminum gallium nitride Aluminum nitride Electric breakdown GaN HEMTs high breakdown high-electron-mobility transistor (HEMT) III-V semiconductor materials MODFETs SiN Wide band gap semiconductors |
title | 24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer |
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