Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition

Specially optimized thyristor-type devices for fast turn-on and high \text{d}{i}/\text{d}{t} capability are promising in pulse power applications. In this work, the transient turn-on characteristics of MOS-gate triggered and current-gate triggered thyristor-type devices operating at ultrahigh \te...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-02, Vol.70 (2), p.640-646
Hauptverfasser:	Liu, Chao, Xing, Pengcheng, Zhang, Shuyi, Chen, Wanjun, Sun, Ruize, Xu, Xiaorui, Xia, Yun, Xin, Yajie, Shi, Yijun, Li, Zhaoji, Zhang, Bo
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes di/dt high voltage Logic gates pulse power Switches thyristor Thyristors Transient analysis Transistors turn-on delay Voltage
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