Patterning magnetic antidot-type arrays by Ga/sup +/ implantation
Summary form only given. By defining a periodic array of square holes into a continuous ferromagnetic film an antidot array is formed. In this way the magnetisation reversal process and domain structure can be significantly changed. In these structures isolated domain states that could represent rec...
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| creator | Owen, N.W. Hang-Yan Yuen Petford-Long, A.K. |
| description | Summary form only given. By defining a periodic array of square holes into a continuous ferromagnetic film an antidot array is formed. In this way the magnetisation reversal process and domain structure can be significantly changed. In these structures isolated domain states that could represent recorded bits have been observed at remanence trapped above and below antidots during hard axis magnetisation reversal. Milling holes using a focused ion beam (FIB) system is slow and reduces the integrity of the films. Here an alternative means to fabricate an antidot array by changing the magnetic properties of thin film NiFe through Ga/sup +/ implantation is outlined. |
| doi_str_mv | 10.1109/INTMAG.2002.1000799 |
| format | Conference Proceeding |
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By defining a periodic array of square holes into a continuous ferromagnetic film an antidot array is formed. In this way the magnetisation reversal process and domain structure can be significantly changed. In these structures isolated domain states that could represent recorded bits have been observed at remanence trapped above and below antidots during hard axis magnetisation reversal. Milling holes using a focused ion beam (FIB) system is slow and reduces the integrity of the films. Here an alternative means to fabricate an antidot array by changing the magnetic properties of thin film NiFe through Ga/sup +/ implantation is outlined.</description><identifier>ISBN: 9780780373655</identifier><identifier>ISBN: 0780373650</identifier><identifier>DOI: 10.1109/INTMAG.2002.1000799</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anisotropic magnetoresistance ; Ion beams ; Magnetic films ; Magnetic hysteresis ; Magnetic materials ; Magnetic properties ; Magnetization reversal ; Magnets ; Milling ; Remanence</subject><ispartof>IEEE International Digest of Technical Papers on Magnetics Conference, 2002, p.BC11</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1000799$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,4035,4036,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1000799$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Owen, N.W.</creatorcontrib><creatorcontrib>Hang-Yan Yuen</creatorcontrib><creatorcontrib>Petford-Long, A.K.</creatorcontrib><title>Patterning magnetic antidot-type arrays by Ga/sup +/ implantation</title><title>IEEE International Digest of Technical Papers on Magnetics Conference</title><addtitle>INTMAG</addtitle><description>Summary form only given. By defining a periodic array of square holes into a continuous ferromagnetic film an antidot array is formed. In this way the magnetisation reversal process and domain structure can be significantly changed. In these structures isolated domain states that could represent recorded bits have been observed at remanence trapped above and below antidots during hard axis magnetisation reversal. Milling holes using a focused ion beam (FIB) system is slow and reduces the integrity of the films. Here an alternative means to fabricate an antidot array by changing the magnetic properties of thin film NiFe through Ga/sup +/ implantation is outlined.</description><subject>Anisotropic magnetoresistance</subject><subject>Ion beams</subject><subject>Magnetic films</subject><subject>Magnetic hysteresis</subject><subject>Magnetic materials</subject><subject>Magnetic properties</subject><subject>Magnetization reversal</subject><subject>Magnets</subject><subject>Milling</subject><subject>Remanence</subject><isbn>9780780373655</isbn><isbn>0780373650</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jr0OgjAURpsYE43yBCzdDXALVOxIjH-DxoGdXLWSGihNWwfeXgZmk5N8w_mGQ0jIIGYMRHK5VdfyFKcAacwAoBBiRgJR7GAkK7It5wsSOPcZHeQ5TwVfkvKO3kurlW5oh42WXj0paq9evY_8YCRFa3Fw9DHQEybua-gmoaoz7XhCr3q9JvM3tk4G065IeDxU-3OkpJS1sapDO9RTUPbf_gDhNTos</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Owen, N.W.</creator><creator>Hang-Yan Yuen</creator><creator>Petford-Long, A.K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2002</creationdate><title>Patterning magnetic antidot-type arrays by Ga/sup +/ implantation</title><author>Owen, N.W. ; Hang-Yan Yuen ; Petford-Long, A.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_10007993</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Anisotropic magnetoresistance</topic><topic>Ion beams</topic><topic>Magnetic films</topic><topic>Magnetic hysteresis</topic><topic>Magnetic materials</topic><topic>Magnetic properties</topic><topic>Magnetization reversal</topic><topic>Magnets</topic><topic>Milling</topic><topic>Remanence</topic><toplevel>online_resources</toplevel><creatorcontrib>Owen, N.W.</creatorcontrib><creatorcontrib>Hang-Yan Yuen</creatorcontrib><creatorcontrib>Petford-Long, A.K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Owen, N.W.</au><au>Hang-Yan Yuen</au><au>Petford-Long, A.K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Patterning magnetic antidot-type arrays by Ga/sup +/ implantation</atitle><btitle>IEEE International Digest of Technical Papers on Magnetics Conference</btitle><stitle>INTMAG</stitle><date>2002</date><risdate>2002</risdate><spage>BC11</spage><pages>BC11-</pages><isbn>9780780373655</isbn><isbn>0780373650</isbn><abstract>Summary form only given. By defining a periodic array of square holes into a continuous ferromagnetic film an antidot array is formed. In this way the magnetisation reversal process and domain structure can be significantly changed. In these structures isolated domain states that could represent recorded bits have been observed at remanence trapped above and below antidots during hard axis magnetisation reversal. Milling holes using a focused ion beam (FIB) system is slow and reduces the integrity of the films. Here an alternative means to fabricate an antidot array by changing the magnetic properties of thin film NiFe through Ga/sup +/ implantation is outlined.</abstract><pub>IEEE</pub><doi>10.1109/INTMAG.2002.1000799</doi></addata></record> |
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| language | eng |
| recordid | cdi_ieee_primary_1000799 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anisotropic magnetoresistance Ion beams Magnetic films Magnetic hysteresis Magnetic materials Magnetic properties Magnetization reversal Magnets Milling Remanence |
| title | Patterning magnetic antidot-type arrays by Ga/sup +/ implantation |
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