A 170-230 GHz High-Power Frequency Doubler Based on a GaAs MMIC Process

This letter reports a high-performance frequency doubler operating at 170-230 GHz based on a GaAs monolithic microwave integrated circuit (MMIC) process. The frequency doubler was designed with a balanced structure and the MMIC was inserted between two E -plane split-waveguide blocks. A "Pass-...

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Veröffentlicht in:	IEEE microwave and wireless technology letters (Print) 2023-04, Vol.33 (4), p.1-4
Hauptverfasser:	Song, Xubo, Lv, Yuanjie, Guo, Cheng, Gu, Guodong, Zhang, Lisen, Wang, Yutong, Wang, Yuangang, An, Weile, Han, Tingting, Hao, Xiaolin, Bu, Aimin, Liang, Shixiong, Chen, Xiaoming, Zhang, Anxue, Feng, Zhihong
Format:	Artikel
Sprache:	eng
Schlagworte:	Frequency conversion Frequency measurement Gallium arsenide Loss measurement Millimeter-wave monolithic microwave integrated circuit (MMIC) multiplier output power Power generation Power measurement Schottky barrier diode (SBD) terahertz (THz) Thermal resistance
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