Enhanced Ultraviolet Detection by Constructing Ga2O3/TiO2 Heterojunction Photodiode Featuring Weak Light Signal Sensing
In this paper, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga 2 O 3 /TiO 2 planar heterojunction is fabricated by both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The DUV PD demonstrated a range of impressive DUV sensing properties, such as an ultra-high r...
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| Veröffentlicht in: | IEEE sensors journal 2023-02, Vol.23 (3), p.1-1 |
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| creator | Qi, Xiao-Hui Liu, Zeng Ji, Xue-Qiang Yue, Jian-Ying Zhi, Yu-Song Li, Shan Yan, Zu-Yong Guo, Yu-Feng Tang, Wei-Hua |
| description | In this paper, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga 2 O 3 /TiO 2 planar heterojunction is fabricated by both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The DUV PD demonstrated a range of impressive DUV sensing properties, such as an ultra-high responsivity ( R ) of 275 A/W, a large specific detectivity ( D *) of 6.69 × 10 16 Jones, and an external quantum efficiency ( EQE ) of 1.35 × 10 5 under illumination with light intensity of 0.1 μW/cm 2 at 5 V. The results indicated that the PD had a capacity for weak DUV light signal sensing along with high performance, suggesting high sensitivity. In addition, the DUV PD can operate stably in a self-powered mode. The excellent performance of the DUV PD comes from the creation of the built-in electric field in heterojunction and the dual absorption of DUV light both by the Ga 2 O 3 layer and TiO 2 layer. In all, the achievements in this work may promote the application of sensitive Ga 2 O 3 -based optoelectronics in energy-conserving DUV sensing systems. |
| doi_str_mv | 10.1109/JSEN.2022.3231656 |
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| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_10003234</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10003234</ieee_id><sourcerecordid>2771534052</sourcerecordid><originalsourceid>FETCH-LOGICAL-i134t-557d238f922091e1d263b9daddd5fd70fd0125f08200b1f8f176015deacf0f93</originalsourceid><addsrcrecordid>eNot0N9LwzAQB_AgCs7pHyD4EPC53SVpmvZR5n4owwmb6FvJlmTLrMlMU2X_vR3z6e64D8fxReiWQEoIlIPnxeglpUBpyigjOc_PUI9wXiREZMX5sWeQZEx8XKKrptkBkFJw0UO_I7eVbq0VfqtjkD_W1zriRx31Olrv8OqAh941MbTd7DZ4IumcDZZ2TvG0Q8HvWneSr1sfvbJeaTzWMrbhyN-1_MQzu9lGvLAbJ2u80K7pNtfowsi60Tf_tY-W49FyOE1m88nT8GGWWMKymHAuFGWFKSmFkmiiaM5WpZJKKW6UAKOAUG6goAArYgpDRA6EKy3XBkzJ-uj-dHYf_Herm1jtfBu6P5qKCtGFkgGnnbo7Kau1rvbBfslwqAgAdGFm7A8sOGgr</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2771534052</pqid></control><display><type>article</type><title>Enhanced Ultraviolet Detection by Constructing Ga2O3/TiO2 Heterojunction Photodiode Featuring Weak Light Signal Sensing</title><source>IEEE Electronic Library (IEL)</source><creator>Qi, Xiao-Hui ; Liu, Zeng ; Ji, Xue-Qiang ; Yue, Jian-Ying ; Zhi, Yu-Song ; Li, Shan ; Yan, Zu-Yong ; Guo, Yu-Feng ; Tang, Wei-Hua</creator><creatorcontrib>Qi, Xiao-Hui ; Liu, Zeng ; Ji, Xue-Qiang ; Yue, Jian-Ying ; Zhi, Yu-Song ; Li, Shan ; Yan, Zu-Yong ; Guo, Yu-Feng ; Tang, Wei-Hua</creatorcontrib><description>In this paper, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga 2 O 3 /TiO 2 planar heterojunction is fabricated by both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The DUV PD demonstrated a range of impressive DUV sensing properties, such as an ultra-high responsivity ( R ) of 275 A/W, a large specific detectivity ( D *) of 6.69 × 10 16 Jones, and an external quantum efficiency ( EQE ) of 1.35 × 10 5 under illumination with light intensity of 0.1 μW/cm 2 at 5 V. The results indicated that the PD had a capacity for weak DUV light signal sensing along with high performance, suggesting high sensitivity. In addition, the DUV PD can operate stably in a self-powered mode. The excellent performance of the DUV PD comes from the creation of the built-in electric field in heterojunction and the dual absorption of DUV light both by the Ga 2 O 3 layer and TiO 2 layer. In all, the achievements in this work may promote the application of sensitive Ga 2 O 3 -based optoelectronics in energy-conserving DUV sensing systems.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2022.3231656</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Absorption ; Electric fields ; Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3 ; Gallium ; Gallium oxides ; Heterojunction ; Heterojunctions ; Luminous intensity ; Magnetic sensors ; Optoelectronics ; Photodiodes ; Photonic band gap ; Quantum efficiency ; Sensors ; Substrates ; TiO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 ; Titanium dioxide ; Ultraviolet detectors ; UV detection ; Vapor deposition ; Weak light detection</subject><ispartof>IEEE sensors journal, 2023-02, Vol.23 (3), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-1490-986X ; 0000-0003-3215-7929 ; 0000-0002-8771-3120</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10003234$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10003234$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Qi, Xiao-Hui</creatorcontrib><creatorcontrib>Liu, Zeng</creatorcontrib><creatorcontrib>Ji, Xue-Qiang</creatorcontrib><creatorcontrib>Yue, Jian-Ying</creatorcontrib><creatorcontrib>Zhi, Yu-Song</creatorcontrib><creatorcontrib>Li, Shan</creatorcontrib><creatorcontrib>Yan, Zu-Yong</creatorcontrib><creatorcontrib>Guo, Yu-Feng</creatorcontrib><creatorcontrib>Tang, Wei-Hua</creatorcontrib><title>Enhanced Ultraviolet Detection by Constructing Ga2O3/TiO2 Heterojunction Photodiode Featuring Weak Light Signal Sensing</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>In this paper, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga 2 O 3 /TiO 2 planar heterojunction is fabricated by both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The DUV PD demonstrated a range of impressive DUV sensing properties, such as an ultra-high responsivity ( R ) of 275 A/W, a large specific detectivity ( D *) of 6.69 × 10 16 Jones, and an external quantum efficiency ( EQE ) of 1.35 × 10 5 under illumination with light intensity of 0.1 μW/cm 2 at 5 V. The results indicated that the PD had a capacity for weak DUV light signal sensing along with high performance, suggesting high sensitivity. In addition, the DUV PD can operate stably in a self-powered mode. The excellent performance of the DUV PD comes from the creation of the built-in electric field in heterojunction and the dual absorption of DUV light both by the Ga 2 O 3 layer and TiO 2 layer. In all, the achievements in this work may promote the application of sensitive Ga 2 O 3 -based optoelectronics in energy-conserving DUV sensing systems.</description><subject>Absorption</subject><subject>Electric fields</subject><subject>Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</subject><subject>Gallium</subject><subject>Gallium oxides</subject><subject>Heterojunction</subject><subject>Heterojunctions</subject><subject>Luminous intensity</subject><subject>Magnetic sensors</subject><subject>Optoelectronics</subject><subject>Photodiodes</subject><subject>Photonic band gap</subject><subject>Quantum efficiency</subject><subject>Sensors</subject><subject>Substrates</subject><subject>TiO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</subject><subject>Titanium dioxide</subject><subject>Ultraviolet detectors</subject><subject>UV detection</subject><subject>Vapor deposition</subject><subject>Weak light detection</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNot0N9LwzAQB_AgCs7pHyD4EPC53SVpmvZR5n4owwmb6FvJlmTLrMlMU2X_vR3z6e64D8fxReiWQEoIlIPnxeglpUBpyigjOc_PUI9wXiREZMX5sWeQZEx8XKKrptkBkFJw0UO_I7eVbq0VfqtjkD_W1zriRx31Olrv8OqAh941MbTd7DZ4IumcDZZ2TvG0Q8HvWneSr1sfvbJeaTzWMrbhyN-1_MQzu9lGvLAbJ2u80K7pNtfowsi60Tf_tY-W49FyOE1m88nT8GGWWMKymHAuFGWFKSmFkmiiaM5WpZJKKW6UAKOAUG6goAArYgpDRA6EKy3XBkzJ-uj-dHYf_Herm1jtfBu6P5qKCtGFkgGnnbo7Kau1rvbBfslwqAgAdGFm7A8sOGgr</recordid><startdate>20230201</startdate><enddate>20230201</enddate><creator>Qi, Xiao-Hui</creator><creator>Liu, Zeng</creator><creator>Ji, Xue-Qiang</creator><creator>Yue, Jian-Ying</creator><creator>Zhi, Yu-Song</creator><creator>Li, Shan</creator><creator>Yan, Zu-Yong</creator><creator>Guo, Yu-Feng</creator><creator>Tang, Wei-Hua</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-1490-986X</orcidid><orcidid>https://orcid.org/0000-0003-3215-7929</orcidid><orcidid>https://orcid.org/0000-0002-8771-3120</orcidid></search><sort><creationdate>20230201</creationdate><title>Enhanced Ultraviolet Detection by Constructing Ga2O3/TiO2 Heterojunction Photodiode Featuring Weak Light Signal Sensing</title><author>Qi, Xiao-Hui ; Liu, Zeng ; Ji, Xue-Qiang ; Yue, Jian-Ying ; Zhi, Yu-Song ; Li, Shan ; Yan, Zu-Yong ; Guo, Yu-Feng ; Tang, Wei-Hua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i134t-557d238f922091e1d263b9daddd5fd70fd0125f08200b1f8f176015deacf0f93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Absorption</topic><topic>Electric fields</topic><topic>Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</topic><topic>Gallium</topic><topic>Gallium oxides</topic><topic>Heterojunction</topic><topic>Heterojunctions</topic><topic>Luminous intensity</topic><topic>Magnetic sensors</topic><topic>Optoelectronics</topic><topic>Photodiodes</topic><topic>Photonic band gap</topic><topic>Quantum efficiency</topic><topic>Sensors</topic><topic>Substrates</topic><topic>TiO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</topic><topic>Titanium dioxide</topic><topic>Ultraviolet detectors</topic><topic>UV detection</topic><topic>Vapor deposition</topic><topic>Weak light detection</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Qi, Xiao-Hui</creatorcontrib><creatorcontrib>Liu, Zeng</creatorcontrib><creatorcontrib>Ji, Xue-Qiang</creatorcontrib><creatorcontrib>Yue, Jian-Ying</creatorcontrib><creatorcontrib>Zhi, Yu-Song</creatorcontrib><creatorcontrib>Li, Shan</creatorcontrib><creatorcontrib>Yan, Zu-Yong</creatorcontrib><creatorcontrib>Guo, Yu-Feng</creatorcontrib><creatorcontrib>Tang, Wei-Hua</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Qi, Xiao-Hui</au><au>Liu, Zeng</au><au>Ji, Xue-Qiang</au><au>Yue, Jian-Ying</au><au>Zhi, Yu-Song</au><au>Li, Shan</au><au>Yan, Zu-Yong</au><au>Guo, Yu-Feng</au><au>Tang, Wei-Hua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Ultraviolet Detection by Constructing Ga2O3/TiO2 Heterojunction Photodiode Featuring Weak Light Signal Sensing</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2023-02-01</date><risdate>2023</risdate><volume>23</volume><issue>3</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>In this paper, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga 2 O 3 /TiO 2 planar heterojunction is fabricated by both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The DUV PD demonstrated a range of impressive DUV sensing properties, such as an ultra-high responsivity ( R ) of 275 A/W, a large specific detectivity ( D *) of 6.69 × 10 16 Jones, and an external quantum efficiency ( EQE ) of 1.35 × 10 5 under illumination with light intensity of 0.1 μW/cm 2 at 5 V. The results indicated that the PD had a capacity for weak DUV light signal sensing along with high performance, suggesting high sensitivity. In addition, the DUV PD can operate stably in a self-powered mode. The excellent performance of the DUV PD comes from the creation of the built-in electric field in heterojunction and the dual absorption of DUV light both by the Ga 2 O 3 layer and TiO 2 layer. In all, the achievements in this work may promote the application of sensitive Ga 2 O 3 -based optoelectronics in energy-conserving DUV sensing systems.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSEN.2022.3231656</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-1490-986X</orcidid><orcidid>https://orcid.org/0000-0003-3215-7929</orcidid><orcidid>https://orcid.org/0000-0002-8771-3120</orcidid></addata></record> |
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| subjects | Absorption Electric fields Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3 Gallium Gallium oxides Heterojunction Heterojunctions Luminous intensity Magnetic sensors Optoelectronics Photodiodes Photonic band gap Quantum efficiency Sensors Substrates TiO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 Titanium dioxide Ultraviolet detectors UV detection Vapor deposition Weak light detection |
| title | Enhanced Ultraviolet Detection by Constructing Ga2O3/TiO2 Heterojunction Photodiode Featuring Weak Light Signal Sensing |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T02%3A53%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhanced%20Ultraviolet%20Detection%20by%20Constructing%20Ga2O3/TiO2%20Heterojunction%20Photodiode%20Featuring%20Weak%20Light%20Signal%20Sensing&rft.jtitle=IEEE%20sensors%20journal&rft.au=Qi,%20Xiao-Hui&rft.date=2023-02-01&rft.volume=23&rft.issue=3&rft.spage=1&rft.epage=1&rft.pages=1-1&rft.issn=1530-437X&rft.eissn=1558-1748&rft.coden=ISJEAZ&rft_id=info:doi/10.1109/JSEN.2022.3231656&rft_dat=%3Cproquest_RIE%3E2771534052%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2771534052&rft_id=info:pmid/&rft_ieee_id=10003234&rfr_iscdi=true |