The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Metal-insulator-semiconductor (MIS) structures have great interest for their good applications in electronic and optoelectronic. Their importance can be attributed that they have storage layer property, capacitance effect and high dielectric constant. For this reason, two samples of Si3N4 layers wer...

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Veröffentlicht in:	Mühendislik bilimleri dergisi 2017, Vol.23 (5), p.536-542
Hauptverfasser:	Orak, İkram, Koçyiğit, Adem
Format:	Artikel
Sprache:	eng
Schlagworte:	Eğitim Bilimleri Mühendislik
Online-Zugang:	Volltext
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