Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Silicon-rich oxide (Si[O.sub.x], 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570°C using silane (Si[H.sub.4]) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100°C to i...

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Veröffentlicht in:	Croatica Chemica Acta 2012-04, Vol.85 (1), p.91-96
Hauptverfasser:	Ristić, Davor, Ivanda, Mile, Furić, Krešimir, Chiasera, Alessandro, Moser, Enrico, Ferrari, Maurizio
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Annealing Chemical vapor deposition Decomposition Dielectric films LPCVD Methods Optical properties Oxides Raman spectroscopy Silane Silicon Spectrum analysis thermal decomposition Thin films
Online-Zugang:	Volltext
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