Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method
Silicon-rich oxide (Si[O.sub.x], 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570°C using silane (Si[H.sub.4]) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100°C to i...
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| Veröffentlicht in: | Croatica Chemica Acta 2012-04, Vol.85 (1), p.91-96 |
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| container_title | Croatica Chemica Acta |
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| creator | Ristić, Davor Ivanda, Mile Furić, Krešimir Chiasera, Alessandro Moser, Enrico Ferrari, Maurizio |
| description | Silicon-rich oxide (Si[O.sub.x], 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570°C using silane (Si[H.sub.4]) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100°C to induce the separation of excess silicon in the Si[O.sub.x] films into nanosized crystalline silicon particles inside an amorphous Si[O.sub.x] matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969) Keywords: LPCVD, silicon, thermal decomposition, thin films |
| doi_str_mv | 10.5562/cca1969 |
| format | Article |
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The films were annealed at temperatures of 800, 900, 1000, and 1100°C to induce the separation of excess silicon in the Si[O.sub.x] films into nanosized crystalline silicon particles inside an amorphous Si[O.sub.x] matrix. The size of the silicon particles was determined using Raman spectroscopy. 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| subjects | Analysis Annealing Chemical vapor deposition Decomposition Dielectric films LPCVD Methods Optical properties Oxides Raman spectroscopy Silane Silicon Spectrum analysis thermal decomposition Thin films |
| title | Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method |
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