Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Silicon-rich oxide (Si[O.sub.x], 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570°C using silane (Si[H.sub.4]) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100°C to i...

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Veröffentlicht in:Croatica Chemica Acta 2012-04, Vol.85 (1), p.91-96
Hauptverfasser: Ristić, Davor, Ivanda, Mile, Furić, Krešimir, Chiasera, Alessandro, Moser, Enrico, Ferrari, Maurizio
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Annealing
Chemical vapor deposition
Decomposition
Dielectric films
LPCVD
Methods
Optical properties
Oxides
Raman spectroscopy
Silane
Silicon
Spectrum analysis
thermal decomposition
Thin films
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Zusammenfassung:Silicon-rich oxide (Si[O.sub.x], 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570°C using silane (Si[H.sub.4]) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100°C to induce the separation of excess silicon in the Si[O.sub.x] films into nanosized crystalline silicon particles inside an amorphous Si[O.sub.x] matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969) Keywords: LPCVD, silicon, thermal decomposition, thin films
ISSN:0011-1643
1334-417X
DOI:10.5562/cca1969