Preparation and Electrical Properties of Ba2TiOSi2−xGe xO7 ( x = 0.0 and 0 . 2 ) Ferroelectric Ceramics

Polycrystalline ceramic samples of pure and germanium (Ge4+) doped fresnoite of general formula Ba2TiOSi2−xGexO7 (x=0.0 and 0.2) have been prepared by solid state reaction technique. The formation of the single phase compound was confirmed by X-ray diffraction and the structural parameters were refi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of solid state physics 2014-07, Vol.2014
Hauptverfasser: Barbar, S. K., Roy, M.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!