Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects
We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law ( I∝Vα with 1
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| Veröffentlicht in: | Physical review. B 2010-07, Vol.82 (4), Article 045416 |
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| container_issue | 4 |
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| container_title | Physical review. B |
| container_volume | 82 |
| creator | Vandecasteele, Niels Barreiro, Amelia Lazzeri, Michele Bachtold, Adrian Mauri, Francesco |
| description | We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law ( I∝Vα with 1 |
| doi_str_mv | 10.1103/PhysRevB.82.045416 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_insu_03605308v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_insu_03605308v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c348t-b443dc1754300eb8b6737d1a930e7e39011f472261c3a11a4e789e22be9fcb993</originalsourceid><addsrcrecordid>eNo9kE1LAzEURQdRsFb_gKushal5SeYj7rSoLRYUURA3IZN504mMmZKkI_33jlRdvQvv3Ls4SXIOdAZA-eVTuwvPONzMSjajIhOQHyQTyDKaMp69HY6ZyjKlwOA4OQnhg1IQUrBJ0s633qOL6dB3Ua-RmFZ7bSJ6G6I1gfQNWXu9adEhqXGwBsMVWboR2HR6RyqMX4iOvI9_nz50aB2JW-ews25NtKvHUoMmhtPkqNFdwLPfO01e725f5ot09Xi_nF-vUsNFGdNKCF4bKDLBKcWqrPKCFzVoySkWyCUFaETBWA6GawAtsCglMlahbEwlJZ8mF_vdVndq4-2n9jvVa6sW1ytlXdgqynOacVoOMMJsDxvfh-Cx-W8AVT9i1Z9YVTK1F8u_AUaJbss</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects</title><source>American Physical Society Journals</source><creator>Vandecasteele, Niels ; Barreiro, Amelia ; Lazzeri, Michele ; Bachtold, Adrian ; Mauri, Francesco</creator><creatorcontrib>Vandecasteele, Niels ; Barreiro, Amelia ; Lazzeri, Michele ; Bachtold, Adrian ; Mauri, Francesco</creatorcontrib><description>We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law ( I∝Vα with 1<α≤1.5 ). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.</description><identifier>ISSN: 1098-0121</identifier><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 1550-235X</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.82.045416</identifier><language>eng</language><publisher>American Physical Society</publisher><subject>Sciences of the Universe</subject><ispartof>Physical review. B, 2010-07, Vol.82 (4), Article 045416</ispartof><rights>Attribution</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-b443dc1754300eb8b6737d1a930e7e39011f472261c3a11a4e789e22be9fcb993</citedby><cites>FETCH-LOGICAL-c348t-b443dc1754300eb8b6737d1a930e7e39011f472261c3a11a4e789e22be9fcb993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,2876,2877,27924,27925</link.rule.ids><backlink>$$Uhttps://insu.hal.science/insu-03605308$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Vandecasteele, Niels</creatorcontrib><creatorcontrib>Barreiro, Amelia</creatorcontrib><creatorcontrib>Lazzeri, Michele</creatorcontrib><creatorcontrib>Bachtold, Adrian</creatorcontrib><creatorcontrib>Mauri, Francesco</creatorcontrib><title>Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects</title><title>Physical review. B</title><description>We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law ( I∝Vα with 1<α≤1.5 ). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.</description><subject>Sciences of the Universe</subject><issn>1098-0121</issn><issn>2469-9950</issn><issn>1550-235X</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEURQdRsFb_gKushal5SeYj7rSoLRYUURA3IZN504mMmZKkI_33jlRdvQvv3Ls4SXIOdAZA-eVTuwvPONzMSjajIhOQHyQTyDKaMp69HY6ZyjKlwOA4OQnhg1IQUrBJ0s633qOL6dB3Ua-RmFZ7bSJ6G6I1gfQNWXu9adEhqXGwBsMVWboR2HR6RyqMX4iOvI9_nz50aB2JW-ews25NtKvHUoMmhtPkqNFdwLPfO01e725f5ot09Xi_nF-vUsNFGdNKCF4bKDLBKcWqrPKCFzVoySkWyCUFaETBWA6GawAtsCglMlahbEwlJZ8mF_vdVndq4-2n9jvVa6sW1ytlXdgqynOacVoOMMJsDxvfh-Cx-W8AVT9i1Z9YVTK1F8u_AUaJbss</recordid><startdate>20100720</startdate><enddate>20100720</enddate><creator>Vandecasteele, Niels</creator><creator>Barreiro, Amelia</creator><creator>Lazzeri, Michele</creator><creator>Bachtold, Adrian</creator><creator>Mauri, Francesco</creator><general>American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope></search><sort><creationdate>20100720</creationdate><title>Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects</title><author>Vandecasteele, Niels ; Barreiro, Amelia ; Lazzeri, Michele ; Bachtold, Adrian ; Mauri, Francesco</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-b443dc1754300eb8b6737d1a930e7e39011f472261c3a11a4e789e22be9fcb993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Sciences of the Universe</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vandecasteele, Niels</creatorcontrib><creatorcontrib>Barreiro, Amelia</creatorcontrib><creatorcontrib>Lazzeri, Michele</creatorcontrib><creatorcontrib>Bachtold, Adrian</creatorcontrib><creatorcontrib>Mauri, Francesco</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vandecasteele, Niels</au><au>Barreiro, Amelia</au><au>Lazzeri, Michele</au><au>Bachtold, Adrian</au><au>Mauri, Francesco</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects</atitle><jtitle>Physical review. B</jtitle><date>2010-07-20</date><risdate>2010</risdate><volume>82</volume><issue>4</issue><artnum>045416</artnum><issn>1098-0121</issn><issn>2469-9950</issn><eissn>1550-235X</eissn><eissn>2469-9969</eissn><abstract>We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law ( I∝Vα with 1<α≤1.5 ). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.</abstract><pub>American Physical Society</pub><doi>10.1103/PhysRevB.82.045416</doi><oa>free_for_read</oa></addata></record> |
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| source | American Physical Society Journals |
| subjects | Sciences of the Universe |
| title | Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T20%3A38%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Current-voltage%20characteristics%20of%20graphene%20devices:%20Interplay%20between%20Zener-Klein%20tunneling%20and%20defects&rft.jtitle=Physical%20review.%20B&rft.au=Vandecasteele,%20Niels&rft.date=2010-07-20&rft.volume=82&rft.issue=4&rft.artnum=045416&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.82.045416&rft_dat=%3Chal_cross%3Eoai_HAL_insu_03605308v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |