A 20 kpixels CdTe photon-counting imager using XPAD chip
A 20 kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon counting chips, forming a 19200 pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150 ns. Detector construction and operation ar...
Gespeichert in:
Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2008-05, Vol.589, p.268-274 |
---|---|
Hauptverfasser: | , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A 20 kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon counting chips, forming a 19200 pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150 ns. Detector construction and operation are described and first results obtained with 241Am source as well as diffraction images using an X-ray synchrotron beam are presented. Polarisation effects are present but remain at a very manageable level. Keywords: pixel detector, photon counting, CdTe, hole collection, XPAD3 |
---|---|
ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/j.nima.2008.02.042 |