A 20 kpixels CdTe photon-counting imager using XPAD chip

A 20 kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon counting chips, forming a 19200 pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150 ns. Detector construction and operation ar...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2008-05, Vol.589, p.268-274
Hauptverfasser: Basolo, S., Bérar, Jean-François, Boudet, Nathalie, Breugnon, P., Chantepie, B., Clémens, J.C., Delpierre, P., Dinkespiler, B., Hustache, S., Medjoubi, K., Ménouni, M., Morel, C., Pangaud, P., Vigeolas, E.
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Sprache:eng
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Zusammenfassung:A 20 kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon counting chips, forming a 19200 pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150 ns. Detector construction and operation are described and first results obtained with 241Am source as well as diffraction images using an X-ray synchrotron beam are presented. Polarisation effects are present but remain at a very manageable level. Keywords: pixel detector, photon counting, CdTe, hole collection, XPAD3
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2008.02.042