Temperature influence on the production of nanodot patterns by ion beam sputtering of Si(001)

The temperature influence (T=300–625 K) on the production of nanodot patterns by 1 keV Ar+ ion beam sputtering (IBS) of Si(001) is addressed. The surface morphology was studied by atomic force microscopy, transmission electron microscopy, and grazing x-ray scattering techniques. Three different T re...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-04, Vol.73 (15), Article 155414
Hauptverfasser: Gago, R., Vázquez, L., Plantevin, O., Sánchez-García, J. A., Varela, M., Ballesteros, M. C., Albella, J. M., Metzger, T. H.
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Sprache:eng
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