Temperature influence on the production of nanodot patterns by ion beam sputtering of Si(001)
The temperature influence (T=300–625 K) on the production of nanodot patterns by 1 keV Ar+ ion beam sputtering (IBS) of Si(001) is addressed. The surface morphology was studied by atomic force microscopy, transmission electron microscopy, and grazing x-ray scattering techniques. Three different T re...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-04, Vol.73 (15), Article 155414 |
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Format: | Artikel |
Sprache: | eng |
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