The ATLAS silicon pixel sensors
Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple sca...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2001-01, Vol.456 (3), p.217-232 |
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| creator | Alam, M.S Ciocio, A Einsweiler, K Emes, J Gilchriese, M Joshi, A Kleinfelder, S Marchesini, R McCormack, F Milgrome, O Palaio, N Pengg, F Richardson, J Zizka, G Ackers, M Andreazza, A Comes, G Fischer, P Keil, M Klasen, V Kuhl, T Meuser, S Ockenfels, W Raith, B Treis, J Wermes, N Gößling, C Hügging, F Wüstenfeld, J Wunstorf, R Barberis, D Beccherle, R Darbo, G Gagliardi, G Gemme, C Morettini, P Musico, P Osculati, B Parodi, F Rossi, L Blanquart, L Breugnon, P Calvet, D Clemens, J.-C Delpierre, P Hallewell, G Laugier, D Mouthuy, T Rozanov, A Valin, I Aleppo, M Caccia, M Ragusa, F Troncon, C Lutz, G Richter, R.H Rohe, T Brandl, A Gorfine, G Hoeferkamp, M Seidel, S.C Boyd, G.R Skubic, P.L Šı́cho, P Tomasek, L Vrba, V Holder, M Ziolkowski, M D’Auria, S del Papa, C Charles, E Fasching, D Becks, K.H Lenzen, G Linder, C |
| description | Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired. |
| doi_str_mv | 10.1016/S0168-9002(00)00574-X |
| format | Article |
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Section A, Accelerators, spectrometers, detectors and associated equipment</jtitle><date>2001-01-01</date><risdate>2001</risdate><volume>456</volume><issue>3</issue><spage>217</spage><epage>232</epage><pages>217-232</pages><issn>0168-9002</issn><eissn>1872-9576</eissn><abstract>Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0168-9002(00)00574-X</doi><tpages>16</tpages><orcidid>https://orcid.org/0000-0002-9953-5333</orcidid><orcidid>https://orcid.org/0000-0003-2112-0653</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0168-9002 |
| ispartof | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2001-01, Vol.456 (3), p.217-232 |
| issn | 0168-9002 1872-9576 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_in2p3_00012109v1 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Instrumentation and Detectors Physics |
| title | The ATLAS silicon pixel sensors |
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