Spin drift velocity, polarization, and current-driven domain-wall motion in (Ga,Mn)(As,P)
Current-driven domain-wall motion is studied in (Ga,Mn)(As,P) ferromagnetic semiconducting tracks with perpendicular anisotropy. A linear steady state flow regime is observed over a large temperature range of the ferromagnetic phase (0.1T(c)
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Veröffentlicht in: | Physical review letters 2012-02, Vol.108 (7), p.076604-076604, Article 076604 |
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container_title | Physical review letters |
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creator | Curiale, J Lemaître, A Ulysse, C Faini, G Jeudy, V |
description | Current-driven domain-wall motion is studied in (Ga,Mn)(As,P) ferromagnetic semiconducting tracks with perpendicular anisotropy. A linear steady state flow regime is observed over a large temperature range of the ferromagnetic phase (0.1T(c) |
doi_str_mv | 10.1103/physrevlett.108.076604 |
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A linear steady state flow regime is observed over a large temperature range of the ferromagnetic phase (0.1T(c)<T<T(c)). Close to 0 K, the domain-wall velocity is found to coincide with the spin drift velocity. This result is obtained below the intrinsic threshold for domain-wall motion which implies a nonadiabatic contribution to the spin transfer torque. The current spin polarization is deduced close to 0 K and to T(c). 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A linear steady state flow regime is observed over a large temperature range of the ferromagnetic phase (0.1T(c)<T<T(c)). Close to 0 K, the domain-wall velocity is found to coincide with the spin drift velocity. This result is obtained below the intrinsic threshold for domain-wall motion which implies a nonadiabatic contribution to the spin transfer torque. The current spin polarization is deduced close to 0 K and to T(c). 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title | Spin drift velocity, polarization, and current-driven domain-wall motion in (Ga,Mn)(As,P) |
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