Investigation of Silver and Copper Doping on Antimony Sulfide Thin Films Obtained by Electrophoretic Deposition
In this work, we demonstrate the production of pure and doped Sb2S3 thin films by electrophoretic deposition (EPD). The consequences of silver and copper doping were evaluated by measuring the films’ structural and optoelectrical properties. Sb2S3 nanoparticles (NPs) were first synthesized in ethyle...
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Veröffentlicht in: | Journal of physical chemistry. C 2024-10, Vol.128 (42), p.18093-18101 |
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creator | Lebastard, Clement Hassam, Christopher L. Suzuki, Tohru Uchikoshi, Tetsuo Thimont, Yohann Berthebaud, David |
description | In this work, we demonstrate the production of pure and doped Sb2S3 thin films by electrophoretic deposition (EPD). The consequences of silver and copper doping were evaluated by measuring the films’ structural and optoelectrical properties. Sb2S3 nanoparticles (NPs) were first synthesized in ethylene glycol and stabilized with polyethylenimine (PEI). Doped NPs were obtained thanks to silver or copper precursors added during the synthesis process. Orthorhombic Sb2S3 and extra AgSbS2 and CuSbS2 phases were identified by XRD after thermal treatment at 300 °C under vacuum. Metallic Sb impurities were also found for thermal treatment under 275 °C. UV–vis–NIR spectroscopy highlighted the optical properties of amorphous and crystalline thin films as well as the variation of optical band gaps by doping. Photocurrent measurement showed an increase in conductivity for doped thin films (by 3 in the dark and by 2 under AM 1.5 illumination). Adding silver or copper also brought a slower recombination of electron–hole pairs after switching the light off. |
doi_str_mv | 10.1021/acs.jpcc.4c04781 |
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fullrecord | <record><control><sourceid>acs_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_04764402v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>a858955408</sourcerecordid><originalsourceid>FETCH-LOGICAL-a197t-feda83a8506454aa135b3b556a0e491c0a90c14bccb3c80e60f4d23bff67f4753</originalsourceid><addsrcrecordid>eNp1kM1rAjEQxUNpodb23mOuha5NNsl-HMWPKggetOeQzSYaWZMlWQX_-2areOtpHjPvzTA_AN4xGmGU4i8hw-jQSjmiEtG8wA9ggEuSJjll7PGuaf4MXkI4IMQIwmQA3NKeVejMTnTGWeg03JjmrDwUtoYT17ZRTl1r7A7G8dh25ujsBW5OjTa1gtu9sXBummOA66oTxqoaVhc4a5TsvGv3zqvOSDhVrQumv_AKnrRognq71SH4mc-2k0WyWn8vJ-NVInCZd4lWtSiIKBjKKKNCYMIqUjGWCaRoiSUSJZKYVlJWRBZIZUjTOiWV1lmuac7IEHxc9-5Fw1tvjsJfuBOGL8Yr3vcipIxSlJ5x9KKrV3oXglf6HsCI93B5hMt7uPwGN0Y-r5G_iTt5G5_53_4Lik9-4Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of Silver and Copper Doping on Antimony Sulfide Thin Films Obtained by Electrophoretic Deposition</title><source>American Chemical Society Journals</source><creator>Lebastard, Clement ; Hassam, Christopher L. ; Suzuki, Tohru ; Uchikoshi, Tetsuo ; Thimont, Yohann ; Berthebaud, David</creator><creatorcontrib>Lebastard, Clement ; Hassam, Christopher L. ; Suzuki, Tohru ; Uchikoshi, Tetsuo ; Thimont, Yohann ; Berthebaud, David</creatorcontrib><description>In this work, we demonstrate the production of pure and doped Sb2S3 thin films by electrophoretic deposition (EPD). The consequences of silver and copper doping were evaluated by measuring the films’ structural and optoelectrical properties. Sb2S3 nanoparticles (NPs) were first synthesized in ethylene glycol and stabilized with polyethylenimine (PEI). Doped NPs were obtained thanks to silver or copper precursors added during the synthesis process. Orthorhombic Sb2S3 and extra AgSbS2 and CuSbS2 phases were identified by XRD after thermal treatment at 300 °C under vacuum. Metallic Sb impurities were also found for thermal treatment under 275 °C. UV–vis–NIR spectroscopy highlighted the optical properties of amorphous and crystalline thin films as well as the variation of optical band gaps by doping. Photocurrent measurement showed an increase in conductivity for doped thin films (by 3 in the dark and by 2 under AM 1.5 illumination). Adding silver or copper also brought a slower recombination of electron–hole pairs after switching the light off.</description><identifier>ISSN: 1932-7447</identifier><identifier>EISSN: 1932-7455</identifier><identifier>DOI: 10.1021/acs.jpcc.4c04781</identifier><language>eng</language><publisher>American Chemical Society</publisher><subject>C: Physical Properties of Materials and Interfaces ; Chemical Sciences ; Material chemistry</subject><ispartof>Journal of physical chemistry. C, 2024-10, Vol.128 (42), p.18093-18101</ispartof><rights>2024 American Chemical Society</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-a197t-feda83a8506454aa135b3b556a0e491c0a90c14bccb3c80e60f4d23bff67f4753</cites><orcidid>0000-0003-3847-4781 ; 0000-0002-4302-3603 ; 0000-0002-2892-2125</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c04781$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.jpcc.4c04781$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>230,314,780,784,885,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://cnrs.hal.science/hal-04764402$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Lebastard, Clement</creatorcontrib><creatorcontrib>Hassam, Christopher L.</creatorcontrib><creatorcontrib>Suzuki, Tohru</creatorcontrib><creatorcontrib>Uchikoshi, Tetsuo</creatorcontrib><creatorcontrib>Thimont, Yohann</creatorcontrib><creatorcontrib>Berthebaud, David</creatorcontrib><title>Investigation of Silver and Copper Doping on Antimony Sulfide Thin Films Obtained by Electrophoretic Deposition</title><title>Journal of physical chemistry. C</title><addtitle>J. Phys. Chem. C</addtitle><description>In this work, we demonstrate the production of pure and doped Sb2S3 thin films by electrophoretic deposition (EPD). The consequences of silver and copper doping were evaluated by measuring the films’ structural and optoelectrical properties. Sb2S3 nanoparticles (NPs) were first synthesized in ethylene glycol and stabilized with polyethylenimine (PEI). Doped NPs were obtained thanks to silver or copper precursors added during the synthesis process. Orthorhombic Sb2S3 and extra AgSbS2 and CuSbS2 phases were identified by XRD after thermal treatment at 300 °C under vacuum. Metallic Sb impurities were also found for thermal treatment under 275 °C. UV–vis–NIR spectroscopy highlighted the optical properties of amorphous and crystalline thin films as well as the variation of optical band gaps by doping. Photocurrent measurement showed an increase in conductivity for doped thin films (by 3 in the dark and by 2 under AM 1.5 illumination). Adding silver or copper also brought a slower recombination of electron–hole pairs after switching the light off.</description><subject>C: Physical Properties of Materials and Interfaces</subject><subject>Chemical Sciences</subject><subject>Material chemistry</subject><issn>1932-7447</issn><issn>1932-7455</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kM1rAjEQxUNpodb23mOuha5NNsl-HMWPKggetOeQzSYaWZMlWQX_-2areOtpHjPvzTA_AN4xGmGU4i8hw-jQSjmiEtG8wA9ggEuSJjll7PGuaf4MXkI4IMQIwmQA3NKeVejMTnTGWeg03JjmrDwUtoYT17ZRTl1r7A7G8dh25ujsBW5OjTa1gtu9sXBummOA66oTxqoaVhc4a5TsvGv3zqvOSDhVrQumv_AKnrRognq71SH4mc-2k0WyWn8vJ-NVInCZd4lWtSiIKBjKKKNCYMIqUjGWCaRoiSUSJZKYVlJWRBZIZUjTOiWV1lmuac7IEHxc9-5Fw1tvjsJfuBOGL8Yr3vcipIxSlJ5x9KKrV3oXglf6HsCI93B5hMt7uPwGN0Y-r5G_iTt5G5_53_4Lik9-4Q</recordid><startdate>20241024</startdate><enddate>20241024</enddate><creator>Lebastard, Clement</creator><creator>Hassam, Christopher L.</creator><creator>Suzuki, Tohru</creator><creator>Uchikoshi, Tetsuo</creator><creator>Thimont, Yohann</creator><creator>Berthebaud, David</creator><general>American Chemical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0003-3847-4781</orcidid><orcidid>https://orcid.org/0000-0002-4302-3603</orcidid><orcidid>https://orcid.org/0000-0002-2892-2125</orcidid></search><sort><creationdate>20241024</creationdate><title>Investigation of Silver and Copper Doping on Antimony Sulfide Thin Films Obtained by Electrophoretic Deposition</title><author>Lebastard, Clement ; Hassam, Christopher L. ; Suzuki, Tohru ; Uchikoshi, Tetsuo ; Thimont, Yohann ; Berthebaud, David</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a197t-feda83a8506454aa135b3b556a0e491c0a90c14bccb3c80e60f4d23bff67f4753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>C: Physical Properties of Materials and Interfaces</topic><topic>Chemical Sciences</topic><topic>Material chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lebastard, Clement</creatorcontrib><creatorcontrib>Hassam, Christopher L.</creatorcontrib><creatorcontrib>Suzuki, Tohru</creatorcontrib><creatorcontrib>Uchikoshi, Tetsuo</creatorcontrib><creatorcontrib>Thimont, Yohann</creatorcontrib><creatorcontrib>Berthebaud, David</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Journal of physical chemistry. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lebastard, Clement</au><au>Hassam, Christopher L.</au><au>Suzuki, Tohru</au><au>Uchikoshi, Tetsuo</au><au>Thimont, Yohann</au><au>Berthebaud, David</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Silver and Copper Doping on Antimony Sulfide Thin Films Obtained by Electrophoretic Deposition</atitle><jtitle>Journal of physical chemistry. C</jtitle><addtitle>J. Phys. Chem. C</addtitle><date>2024-10-24</date><risdate>2024</risdate><volume>128</volume><issue>42</issue><spage>18093</spage><epage>18101</epage><pages>18093-18101</pages><issn>1932-7447</issn><eissn>1932-7455</eissn><abstract>In this work, we demonstrate the production of pure and doped Sb2S3 thin films by electrophoretic deposition (EPD). The consequences of silver and copper doping were evaluated by measuring the films’ structural and optoelectrical properties. Sb2S3 nanoparticles (NPs) were first synthesized in ethylene glycol and stabilized with polyethylenimine (PEI). Doped NPs were obtained thanks to silver or copper precursors added during the synthesis process. Orthorhombic Sb2S3 and extra AgSbS2 and CuSbS2 phases were identified by XRD after thermal treatment at 300 °C under vacuum. Metallic Sb impurities were also found for thermal treatment under 275 °C. UV–vis–NIR spectroscopy highlighted the optical properties of amorphous and crystalline thin films as well as the variation of optical band gaps by doping. Photocurrent measurement showed an increase in conductivity for doped thin films (by 3 in the dark and by 2 under AM 1.5 illumination). Adding silver or copper also brought a slower recombination of electron–hole pairs after switching the light off.</abstract><pub>American Chemical Society</pub><doi>10.1021/acs.jpcc.4c04781</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-3847-4781</orcidid><orcidid>https://orcid.org/0000-0002-4302-3603</orcidid><orcidid>https://orcid.org/0000-0002-2892-2125</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | C: Physical Properties of Materials and Interfaces Chemical Sciences Material chemistry |
title | Investigation of Silver and Copper Doping on Antimony Sulfide Thin Films Obtained by Electrophoretic Deposition |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T09%3A19%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20Silver%20and%20Copper%20Doping%20on%20Antimony%20Sulfide%20Thin%20Films%20Obtained%20by%20Electrophoretic%20Deposition&rft.jtitle=Journal%20of%20physical%20chemistry.%20C&rft.au=Lebastard,%20Clement&rft.date=2024-10-24&rft.volume=128&rft.issue=42&rft.spage=18093&rft.epage=18101&rft.pages=18093-18101&rft.issn=1932-7447&rft.eissn=1932-7455&rft_id=info:doi/10.1021/acs.jpcc.4c04781&rft_dat=%3Cacs_hal_p%3Ea858955408%3C/acs_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |