Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2
Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS ) on Si/SiO substrates by direct liquid...
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| creator | Astié, Vincent Wasem Klein, Felipe Makhlouf, Houssin Paillet, Matthieu Huntzinger, Jean-Roch Sauvajol, Jean-Louis Zahab, Ahmed-Azmi Juillaguet, Sandrine Contreras, Sylvie Voiry, Damien Landois, Périne Decams, Jean-Manuel |
| description | Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS
) on Si/SiO
substrates by direct liquid injection pulsed-pressure metal-organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS
showed near stoichiometry (S/Mo = 1.93-1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS
grown on the same substrates. |
| doi_str_mv | 10.1039/D4CP00603H |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_04734922v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>39370957</sourcerecordid><originalsourceid>FETCH-LOGICAL-c927-a5a51ea0a92fb3f93ba05dc6f47d0d1566aa103768b0f29cebf433b9667de4373</originalsourceid><addsrcrecordid>eNpFkF1LwzAUhoMobk5v_AGSW4W6k48my-Vo1QkbEza8LWmTaEa31sQK_ns7pvPqfPC8B86D0DWBewJMjXOevQAIYLMTNCRcsETBhJ8eeykG6CLGDQCQlLBzNGCKSVCpHKJF7oOtPnHtPzpvsN9t-sk3O9x2dbQmaYONsQsWL5bZa44bh2sd3izWwWq8aFaY4h5e-fHKLzG9RGdO97mr3zpC68eHdTZL5sun52w6TypFZaJTnRKrQSvqSuYUKzWkphKOSwOGpEJo3T8mxaQER1VlS8cZK5UQ0ljOJBuh28PZd10XbfBbHb6LRvtiNp0X-x1wybii9Iv07N2BrUITY7DuGCBQ7PUV__p6-OYAt125teaI_vliP7JOZ20</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Astié, Vincent ; Wasem Klein, Felipe ; Makhlouf, Houssin ; Paillet, Matthieu ; Huntzinger, Jean-Roch ; Sauvajol, Jean-Louis ; Zahab, Ahmed-Azmi ; Juillaguet, Sandrine ; Contreras, Sylvie ; Voiry, Damien ; Landois, Périne ; Decams, Jean-Manuel</creator><creatorcontrib>Astié, Vincent ; Wasem Klein, Felipe ; Makhlouf, Houssin ; Paillet, Matthieu ; Huntzinger, Jean-Roch ; Sauvajol, Jean-Louis ; Zahab, Ahmed-Azmi ; Juillaguet, Sandrine ; Contreras, Sylvie ; Voiry, Damien ; Landois, Périne ; Decams, Jean-Manuel</creatorcontrib><description>Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS
) on Si/SiO
substrates by direct liquid injection pulsed-pressure metal-organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS
showed near stoichiometry (S/Mo = 1.93-1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS
grown on the same substrates.</description><identifier>ISSN: 1463-9076</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/D4CP00603H</identifier><identifier>PMID: 39370957</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Chemical Sciences</subject><ispartof>Physical chemistry chemical physics : PCCP, 2024-10, Vol.26 (40), p.25772-25779</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c927-a5a51ea0a92fb3f93ba05dc6f47d0d1566aa103768b0f29cebf433b9667de4373</cites><orcidid>0000-0001-6548-178X ; 0000-0001-7038-9101 ; 0000-0002-4733-9998 ; 0000-0002-4032-366X ; 0000-0002-9650-198X ; 0000-0002-1664-2839</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39370957$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-04734922$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Astié, Vincent</creatorcontrib><creatorcontrib>Wasem Klein, Felipe</creatorcontrib><creatorcontrib>Makhlouf, Houssin</creatorcontrib><creatorcontrib>Paillet, Matthieu</creatorcontrib><creatorcontrib>Huntzinger, Jean-Roch</creatorcontrib><creatorcontrib>Sauvajol, Jean-Louis</creatorcontrib><creatorcontrib>Zahab, Ahmed-Azmi</creatorcontrib><creatorcontrib>Juillaguet, Sandrine</creatorcontrib><creatorcontrib>Contreras, Sylvie</creatorcontrib><creatorcontrib>Voiry, Damien</creatorcontrib><creatorcontrib>Landois, Périne</creatorcontrib><creatorcontrib>Decams, Jean-Manuel</creatorcontrib><title>Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2</title><title>Physical chemistry chemical physics : PCCP</title><addtitle>Phys Chem Chem Phys</addtitle><description>Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS
) on Si/SiO
substrates by direct liquid injection pulsed-pressure metal-organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS
showed near stoichiometry (S/Mo = 1.93-1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS
grown on the same substrates.</description><subject>Chemical Sciences</subject><issn>1463-9076</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpFkF1LwzAUhoMobk5v_AGSW4W6k48my-Vo1QkbEza8LWmTaEa31sQK_ns7pvPqfPC8B86D0DWBewJMjXOevQAIYLMTNCRcsETBhJ8eeykG6CLGDQCQlLBzNGCKSVCpHKJF7oOtPnHtPzpvsN9t-sk3O9x2dbQmaYONsQsWL5bZa44bh2sd3izWwWq8aFaY4h5e-fHKLzG9RGdO97mr3zpC68eHdTZL5sun52w6TypFZaJTnRKrQSvqSuYUKzWkphKOSwOGpEJo3T8mxaQER1VlS8cZK5UQ0ljOJBuh28PZd10XbfBbHb6LRvtiNp0X-x1wybii9Iv07N2BrUITY7DuGCBQ7PUV__p6-OYAt125teaI_vliP7JOZ20</recordid><startdate>20241017</startdate><enddate>20241017</enddate><creator>Astié, Vincent</creator><creator>Wasem Klein, Felipe</creator><creator>Makhlouf, Houssin</creator><creator>Paillet, Matthieu</creator><creator>Huntzinger, Jean-Roch</creator><creator>Sauvajol, Jean-Louis</creator><creator>Zahab, Ahmed-Azmi</creator><creator>Juillaguet, Sandrine</creator><creator>Contreras, Sylvie</creator><creator>Voiry, Damien</creator><creator>Landois, Périne</creator><creator>Decams, Jean-Manuel</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0001-6548-178X</orcidid><orcidid>https://orcid.org/0000-0001-7038-9101</orcidid><orcidid>https://orcid.org/0000-0002-4733-9998</orcidid><orcidid>https://orcid.org/0000-0002-4032-366X</orcidid><orcidid>https://orcid.org/0000-0002-9650-198X</orcidid><orcidid>https://orcid.org/0000-0002-1664-2839</orcidid></search><sort><creationdate>20241017</creationdate><title>Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2</title><author>Astié, Vincent ; Wasem Klein, Felipe ; Makhlouf, Houssin ; Paillet, Matthieu ; Huntzinger, Jean-Roch ; Sauvajol, Jean-Louis ; Zahab, Ahmed-Azmi ; Juillaguet, Sandrine ; Contreras, Sylvie ; Voiry, Damien ; Landois, Périne ; Decams, Jean-Manuel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c927-a5a51ea0a92fb3f93ba05dc6f47d0d1566aa103768b0f29cebf433b9667de4373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Chemical Sciences</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Astié, Vincent</creatorcontrib><creatorcontrib>Wasem Klein, Felipe</creatorcontrib><creatorcontrib>Makhlouf, Houssin</creatorcontrib><creatorcontrib>Paillet, Matthieu</creatorcontrib><creatorcontrib>Huntzinger, Jean-Roch</creatorcontrib><creatorcontrib>Sauvajol, Jean-Louis</creatorcontrib><creatorcontrib>Zahab, Ahmed-Azmi</creatorcontrib><creatorcontrib>Juillaguet, Sandrine</creatorcontrib><creatorcontrib>Contreras, Sylvie</creatorcontrib><creatorcontrib>Voiry, Damien</creatorcontrib><creatorcontrib>Landois, Périne</creatorcontrib><creatorcontrib>Decams, Jean-Manuel</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Physical chemistry chemical physics : PCCP</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Astié, Vincent</au><au>Wasem Klein, Felipe</au><au>Makhlouf, Houssin</au><au>Paillet, Matthieu</au><au>Huntzinger, Jean-Roch</au><au>Sauvajol, Jean-Louis</au><au>Zahab, Ahmed-Azmi</au><au>Juillaguet, Sandrine</au><au>Contreras, Sylvie</au><au>Voiry, Damien</au><au>Landois, Périne</au><au>Decams, Jean-Manuel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2</atitle><jtitle>Physical chemistry chemical physics : PCCP</jtitle><addtitle>Phys Chem Chem Phys</addtitle><date>2024-10-17</date><risdate>2024</risdate><volume>26</volume><issue>40</issue><spage>25772</spage><epage>25779</epage><pages>25772-25779</pages><issn>1463-9076</issn><eissn>1463-9084</eissn><abstract>Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS
) on Si/SiO
substrates by direct liquid injection pulsed-pressure metal-organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS
showed near stoichiometry (S/Mo = 1.93-1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS
grown on the same substrates.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>39370957</pmid><doi>10.1039/D4CP00603H</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-6548-178X</orcidid><orcidid>https://orcid.org/0000-0001-7038-9101</orcidid><orcidid>https://orcid.org/0000-0002-4733-9998</orcidid><orcidid>https://orcid.org/0000-0002-4032-366X</orcidid><orcidid>https://orcid.org/0000-0002-9650-198X</orcidid><orcidid>https://orcid.org/0000-0002-1664-2839</orcidid><oa>free_for_read</oa></addata></record> |
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
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| title | Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2 |
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