Enhancement of Piezoelectric Properties in a Narrow Cerium Doping Range of Ba1– xCaxTi1– yZryO3 Evidenced by Combinatorial Experiment

Lead-free materials based on the (Ba,Ca)(Zr,Ti)O3 (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a combinatorial strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric proper...

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Hauptverfasser: Nadaud, Kevin, Nataf, Guillaume, Jaber, Nazir, Negulescu, Béatrice, Giovannelli, Fabien, Andreazza, Pascal, Birnal, Pierre, Wolfman, Jérôme
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container_title ACS applied electronic materials
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creator Nadaud, Kevin
Nataf, Guillaume
Jaber, Nazir
Negulescu, Béatrice
Giovannelli, Fabien
Andreazza, Pascal
Birnal, Pierre
Wolfman, Jérôme
description Lead-free materials based on the (Ba,Ca)(Zr,Ti)O3 (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a combinatorial strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric properties of BCTZ. We synthesize and characterize a single BCTZ thin film with a composition gradient from undoped to 0.2 mol % cerium doping. The cerium doping increases the piezoelectric coefficient from 42.3 ± 2.9 pm V–1 (undoped) to 63.0 ± 2.4 pm V–1 for 0.06 Ce-mol %, and then decreases to 38.4 ± 1.3 pm V –1 for the maximum amount of cerium (0.2 mol %). An investigation of subcoercive field nonlinearities reveals that these variations are not only induced by changes in dynamics and densities of domain walls. The results highlight the advantage of combinatorial techniques to identify ideal compositions for applications without synthesizing a high number of samples with unavoidable sample-to-sample variations.
doi_str_mv 10.1021/acsaelm.4c01282
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fullrecord <record><control><sourceid>hal</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_04725247v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_04725247v1</sourcerecordid><originalsourceid>FETCH-hal_primary_oai_HAL_hal_04725247v13</originalsourceid><addsrcrecordid>eNqVjbFOwzAURS0EEhV0Zn0rQ4vtpA0rhKAOCKqqE0v06r62DyV2ZIeSMLEy84d8CQliYO10r67O1RHiQsmxklpdoQlIRTmOjVT6Wh-JgZ5GyWiqVHT8r5-KYQgvUnYXHeuJGojPzO7QGirJ1uA2MGd6d1SQqT0bmHtXka-ZArAFhEf03r1BSp5fS7hzFdstLNBuqf_eovr--IImxWbJv7V99u1TBNme19RJ1rBqIXXlii3WzjMWkDWdgHv7uTjZYBFo-Jdn4vI-W6az0Q6LvOoY9G3ukPPZzUPebzJO9ETHyV5Fh7A_zkJgjw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Enhancement of Piezoelectric Properties in a Narrow Cerium Doping Range of Ba1– xCaxTi1– yZryO3 Evidenced by Combinatorial Experiment</title><source>American Chemical Society Journals</source><creator>Nadaud, Kevin ; Nataf, Guillaume ; Jaber, Nazir ; Negulescu, Béatrice ; Giovannelli, Fabien ; Andreazza, Pascal ; Birnal, Pierre ; Wolfman, Jérôme</creator><creatorcontrib>Nadaud, Kevin ; Nataf, Guillaume ; Jaber, Nazir ; Negulescu, Béatrice ; Giovannelli, Fabien ; Andreazza, Pascal ; Birnal, Pierre ; Wolfman, Jérôme</creatorcontrib><description>Lead-free materials based on the (Ba,Ca)(Zr,Ti)O3 (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a combinatorial strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric properties of BCTZ. We synthesize and characterize a single BCTZ thin film with a composition gradient from undoped to 0.2 mol % cerium doping. The cerium doping increases the piezoelectric coefficient from 42.3 ± 2.9 pm V–1 (undoped) to 63.0 ± 2.4 pm V–1 for 0.06 Ce-mol %, and then decreases to 38.4 ± 1.3 pm V –1 for the maximum amount of cerium (0.2 mol %). An investigation of subcoercive field nonlinearities reveals that these variations are not only induced by changes in dynamics and densities of domain walls. The results highlight the advantage of combinatorial techniques to identify ideal compositions for applications without synthesizing a high number of samples with unavoidable sample-to-sample variations.</description><identifier>ISSN: 2637-6113</identifier><identifier>EISSN: 2637-6113</identifier><identifier>DOI: 10.1021/acsaelm.4c01282</identifier><language>eng</language><publisher>American Chemical Society</publisher><subject>Engineering Sciences ; Micro and nanotechnologies ; Microelectronics</subject><ispartof>ACS applied electronic materials, 2024-10</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-8042-5583 ; 0000-0002-2969-1453 ; 0000-0001-9215-4717 ; 0000-0003-1248-077X ; 0000-0002-2969-1453 ; 0000-0003-1248-077X ; 0000-0001-9215-4717 ; 0000-0001-8042-5583</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-04725247$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Nadaud, Kevin</creatorcontrib><creatorcontrib>Nataf, Guillaume</creatorcontrib><creatorcontrib>Jaber, Nazir</creatorcontrib><creatorcontrib>Negulescu, Béatrice</creatorcontrib><creatorcontrib>Giovannelli, Fabien</creatorcontrib><creatorcontrib>Andreazza, Pascal</creatorcontrib><creatorcontrib>Birnal, Pierre</creatorcontrib><creatorcontrib>Wolfman, Jérôme</creatorcontrib><title>Enhancement of Piezoelectric Properties in a Narrow Cerium Doping Range of Ba1– xCaxTi1– yZryO3 Evidenced by Combinatorial Experiment</title><title>ACS applied electronic materials</title><description>Lead-free materials based on the (Ba,Ca)(Zr,Ti)O3 (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a combinatorial strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric properties of BCTZ. We synthesize and characterize a single BCTZ thin film with a composition gradient from undoped to 0.2 mol % cerium doping. The cerium doping increases the piezoelectric coefficient from 42.3 ± 2.9 pm V–1 (undoped) to 63.0 ± 2.4 pm V–1 for 0.06 Ce-mol %, and then decreases to 38.4 ± 1.3 pm V –1 for the maximum amount of cerium (0.2 mol %). An investigation of subcoercive field nonlinearities reveals that these variations are not only induced by changes in dynamics and densities of domain walls. The results highlight the advantage of combinatorial techniques to identify ideal compositions for applications without synthesizing a high number of samples with unavoidable sample-to-sample variations.</description><subject>Engineering Sciences</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><issn>2637-6113</issn><issn>2637-6113</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqVjbFOwzAURS0EEhV0Zn0rQ4vtpA0rhKAOCKqqE0v06r62DyV2ZIeSMLEy84d8CQliYO10r67O1RHiQsmxklpdoQlIRTmOjVT6Wh-JgZ5GyWiqVHT8r5-KYQgvUnYXHeuJGojPzO7QGirJ1uA2MGd6d1SQqT0bmHtXka-ZArAFhEf03r1BSp5fS7hzFdstLNBuqf_eovr--IImxWbJv7V99u1TBNme19RJ1rBqIXXlii3WzjMWkDWdgHv7uTjZYBFo-Jdn4vI-W6az0Q6LvOoY9G3ukPPZzUPebzJO9ETHyV5Fh7A_zkJgjw</recordid><startdate>20241004</startdate><enddate>20241004</enddate><creator>Nadaud, Kevin</creator><creator>Nataf, Guillaume</creator><creator>Jaber, Nazir</creator><creator>Negulescu, Béatrice</creator><creator>Giovannelli, Fabien</creator><creator>Andreazza, Pascal</creator><creator>Birnal, Pierre</creator><creator>Wolfman, Jérôme</creator><general>American Chemical Society</general><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-8042-5583</orcidid><orcidid>https://orcid.org/0000-0002-2969-1453</orcidid><orcidid>https://orcid.org/0000-0001-9215-4717</orcidid><orcidid>https://orcid.org/0000-0003-1248-077X</orcidid><orcidid>https://orcid.org/0000-0002-2969-1453</orcidid><orcidid>https://orcid.org/0000-0003-1248-077X</orcidid><orcidid>https://orcid.org/0000-0001-9215-4717</orcidid><orcidid>https://orcid.org/0000-0001-8042-5583</orcidid></search><sort><creationdate>20241004</creationdate><title>Enhancement of Piezoelectric Properties in a Narrow Cerium Doping Range of Ba1– xCaxTi1– yZryO3 Evidenced by Combinatorial Experiment</title><author>Nadaud, Kevin ; Nataf, Guillaume ; Jaber, Nazir ; Negulescu, Béatrice ; Giovannelli, Fabien ; Andreazza, Pascal ; Birnal, Pierre ; Wolfman, Jérôme</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-hal_primary_oai_HAL_hal_04725247v13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Engineering Sciences</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nadaud, Kevin</creatorcontrib><creatorcontrib>Nataf, Guillaume</creatorcontrib><creatorcontrib>Jaber, Nazir</creatorcontrib><creatorcontrib>Negulescu, Béatrice</creatorcontrib><creatorcontrib>Giovannelli, Fabien</creatorcontrib><creatorcontrib>Andreazza, Pascal</creatorcontrib><creatorcontrib>Birnal, Pierre</creatorcontrib><creatorcontrib>Wolfman, Jérôme</creatorcontrib><collection>Hyper Article en Ligne (HAL)</collection><jtitle>ACS applied electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nadaud, Kevin</au><au>Nataf, Guillaume</au><au>Jaber, Nazir</au><au>Negulescu, Béatrice</au><au>Giovannelli, Fabien</au><au>Andreazza, Pascal</au><au>Birnal, Pierre</au><au>Wolfman, Jérôme</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of Piezoelectric Properties in a Narrow Cerium Doping Range of Ba1– xCaxTi1– yZryO3 Evidenced by Combinatorial Experiment</atitle><jtitle>ACS applied electronic materials</jtitle><date>2024-10-04</date><risdate>2024</risdate><issn>2637-6113</issn><eissn>2637-6113</eissn><abstract>Lead-free materials based on the (Ba,Ca)(Zr,Ti)O3 (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a combinatorial strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric properties of BCTZ. We synthesize and characterize a single BCTZ thin film with a composition gradient from undoped to 0.2 mol % cerium doping. The cerium doping increases the piezoelectric coefficient from 42.3 ± 2.9 pm V–1 (undoped) to 63.0 ± 2.4 pm V–1 for 0.06 Ce-mol %, and then decreases to 38.4 ± 1.3 pm V –1 for the maximum amount of cerium (0.2 mol %). An investigation of subcoercive field nonlinearities reveals that these variations are not only induced by changes in dynamics and densities of domain walls. The results highlight the advantage of combinatorial techniques to identify ideal compositions for applications without synthesizing a high number of samples with unavoidable sample-to-sample variations.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsaelm.4c01282</doi><orcidid>https://orcid.org/0000-0001-8042-5583</orcidid><orcidid>https://orcid.org/0000-0002-2969-1453</orcidid><orcidid>https://orcid.org/0000-0001-9215-4717</orcidid><orcidid>https://orcid.org/0000-0003-1248-077X</orcidid><orcidid>https://orcid.org/0000-0002-2969-1453</orcidid><orcidid>https://orcid.org/0000-0003-1248-077X</orcidid><orcidid>https://orcid.org/0000-0001-9215-4717</orcidid><orcidid>https://orcid.org/0000-0001-8042-5583</orcidid></addata></record>
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title Enhancement of Piezoelectric Properties in a Narrow Cerium Doping Range of Ba1– xCaxTi1– yZryO3 Evidenced by Combinatorial Experiment
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T13%3A27%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancement%20of%20Piezoelectric%20Properties%20in%20a%20Narrow%20Cerium%20Doping%20Range%20of%20Ba1%E2%80%93%20xCaxTi1%E2%80%93%20yZryO3%20Evidenced%20by%20Combinatorial%20Experiment&rft.jtitle=ACS%20applied%20electronic%20materials&rft.au=Nadaud,%20Kevin&rft.date=2024-10-04&rft.issn=2637-6113&rft.eissn=2637-6113&rft_id=info:doi/10.1021/acsaelm.4c01282&rft_dat=%3Chal%3Eoai_HAL_hal_04725247v1%3C/hal%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true